Antiphase Boundary Defects in Strontium Doped Lanthanum Scandate

2021 ◽  
Author(s):  
Maxim V. Ananyev ◽  
Andrei S. Farlenkov ◽  
Olga M. Zhigalina ◽  
Dmitry N. Khmelenin ◽  
Alexandra V. Atanova ◽  
...  
Keyword(s):  
Antiphase Boundary

Observation of Superlattice Dislocations on Cube Planes in Ni3Al

1973 ◽  
Vol 31 ◽  
pp. 174-175 ◽  
Author(s):  
J. M. Oblak ◽  
W. H. Rand
Keyword(s):  
Nearest Neighbor ◽  
Antiphase Boundary ◽  
Nearest Neighbors ◽  
High Energy ◽  
Cross Slip ◽  
Octahedral Plane ◽  
Trapping Mechanism ◽  
Slip Traces

The energy of an a/2 <110> shear antiphase. boundary in the Ll2 expected to be at a minimum on {100} cube planes because here strue ture is there is no violation of nearest-neighbor order. The latter however does involve the disruption of second nearest neighbors. It has been suggested that cross slip of paired a/2 <110> dislocations from octahedral onto cube planes is an important dislocation trapping mechanism in Ni3Al; furthermore, slip traces consistent with cube slip are observed above 920°K.Due to the high energy of the {111} antiphase boundary (> 200 mJ/m2), paired a/2 <110> dislocations are tightly constricted on the octahedral plane and cannot be individually resolved.

Determination of the lattice translation across {110} APBs in GaAs

1988 ◽  
Vol 46 ◽  
pp. 600-601
Author(s):  
D.R. Rasmussen ◽  
N.-H. Cho ◽  
C.B. Carter
Keyword(s):  
Grain Boundaries ◽  
Lower Energy ◽  
Antiphase Boundary ◽  
The Other ◽  
Boundary Structure ◽  
Interface Plane ◽  
Inversion Symmetry ◽  
High Angle ◽  
Equilibrium Distance

Domains in GaAs can exist which are related to one another by the inversion symmetry, i.e., the sites of gallium and arsenic in one domain are interchanged in the other domain. The boundary between these two different domains is known as an antiphase boundary [1], In the terminology used to describe grain boundaries, the grains on either side of this boundary can be regarded as being Σ=1-related. For the {110} interface plane, in particular, there are equal numbers of GaGa and As-As anti-site bonds across the interface. The equilibrium distance between two atoms of the same kind crossing the boundary is expected to be different from the length of normal GaAs bonds in the bulk. Therefore, the relative position of each grain on either side of an APB may be translated such that the boundary can have a lower energy situation. This translation does not affect the perfect Σ=1 coincidence site relationship. Such a lattice translation is expected for all high-angle grain boundaries as a way of relaxation of the boundary structure.

Formation process of periodic non-conservative antiphase boundary structure in L-Pd5Ce

1990 ◽  
Vol 48 (4) ◽  
pp. 162-163
Author(s):  
Masaru Itakura ◽  
Noriyuki Kuwano ◽  
Kensuke Oki
Keyword(s):  
Formation Process ◽  
Domain Size ◽  
Antiphase Boundary ◽  
Boundary Structure ◽  
Temperature Phase ◽  
Arc Melting ◽  
Iced Water ◽  
Antiphase Domains ◽  
Low Temperature Phase ◽  
Degree Of Order

The low temperature phase of Pd5Ce (L-Pd5Ce) has a one-dimensional long period superstructure (1D-LPS) derived from Ll2. The periodic antiphase boundaries (APBs) are parallel to (110) planes and have a shift vector of 1/2[110]. Hereafter, the indices are referred to the basic lattices of Ll2 As insertion of the APB causes a change in composition, such an APB is called “non-conservative”. Then, a domain size M depends upon the Ce concentration in the alloy. It was found that M increases also with temperature. The temperature dependency of M is attributed to a change of the degree of order within the antiphase domains. In this work, morphology of the non-conservative APBs is observed to clarify the formation process of the 1D-LPS.The alloy of Pd-16.7 at%Ce was prepared by arc melting in argon atmosphere. Disc specimens made from the alloy ingot were first held at 985 K for 260 ks and quenched in iced water to obtain the state of M=∞ or Ll2, followed by annealing for various lengths of time. The annealing temperature was 873 K where the equilibrium value for M is about 3 in unit of (110) lattice spacing of Ll2. Observation was carried out using microscopes JEM-2000FX, JEM-4000EX (HVEM Lab., Kyushu Univ.) and JEM-2000EX (Dept. of Mater. Sci. Tech., Kyushu Univ.).

Interpretation of the Contrast of High-Resolution Electron Microscopy Images of Ni4Mo by Means of Simulated Image Maps

1990 ◽  
Vol 48 (1) ◽  
pp. 28-29
Author(s):  
A. Thust ◽  
K. Urban
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Antiphase Boundary ◽  
High Resolution Electron Microscopy ◽  
Foil Thickness ◽  
Order Structure ◽  
Simulated Image ◽  
Resolution Electron ◽  
Fcc Lattice ◽  
Direct Interpretation

The alloy of composition Ni4Mo develops, at temperatures below 860 °C, an ordered Dla-structure which is based on the fcc-lattice. This alloy has been widely investigated with respect to its physical properties and its ordering behaviour. High resolution studies are rare and concentrated mainly on its short-range order structure. The aim of the present work was to develop a detailed understanding of image contrast and to apply the results to antiphase-boundary studies in ordered Ni4Mo by means of a JEOL 4000 EX electron microscope.In high-resolution electron microscopy, depending on defocus and foil thickness, a large variety of different images is obtained. Only a few of these allow a direct interpretation concerning the location and the type of the atoms. By computing a through-focus/through-thickness map (TFTT map) before starting experimental work it is possible to determine the proper conditions at which images can be obtained which are closely related to the projected potential.

Antiphase-Boundary-Engineered Domain Switching in a (110)-Oriented BiFeO3 Film

2021 ◽  
Author(s):  
Yangyang Zhang ◽  
Myung-Geun Han ◽  
Daniel Sando ◽  
Lijun Wu ◽  
Nagarajan Valanoor ◽  
...  
Keyword(s):  
Domain Switching ◽  
Antiphase Boundary ◽  
Bifeo3 Film

First-Principles Study of the Effect of Al and Hf Impurities on Co 3W Antiphase Boundary Energies

2021 ◽  
Author(s):  
Chiraag Nataraj ◽  
Ruoshi Sun ◽  
Christopher Woodward ◽  
Axel van de Walle
Keyword(s):  
First Principles ◽  
Antiphase Boundary ◽  
First Principles Study

scholarly journals Temperature Effects on the Elastic Constants, Stacking Fault Energy and Twinnability of Ni3Si and Ni3Ge: A First-Principles Study

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 364 ◽  
Author(s):  
Lili Liu ◽  
Liwan Chen ◽  
Youchang Jiang ◽  
Chenglin He ◽  
Gang Xu ◽  
...  
Keyword(s):  
Elastic Constants ◽  
First Principles ◽  
Antiphase Boundary ◽  
Stacking Fault ◽  
First Principles Calculations ◽  
Planar Fault ◽  
Different Temperatures ◽  
Generalized Stacking Fault ◽  
Increasing Temperature ◽  
Stacking Fault Energies

The volume versus temperature relations for Ni 3 Si and Ni 3 Ge are obtained by using the first principles calculations combined with the quasiharmonic approach. Based on the equilibrium volumes at temperature T, the temperature dependence of the elastic constants, generalized stacking fault energies and generalized planar fault energies of Ni 3 Si and Ni 3 Ge are investigated by first principles calculations. The elastic constants, antiphase boundary energies, complex stacking fault energies, superlattice intrinsic stacking fault energies and twinning energy decrease with increasing temperature. The twinnability of Ni 3 Si and Ni 3 Ge are examined using the twinnability criteria. It is found that their twinnability decrease with increasing temperature. Furthermore, Ni 3 Si has better twinnability than Ni 3 Ge at different temperatures.

Formation of antiphase-boundary tubes and magnetization in Fe-35at.° Al by plastic deformation at 77K

1998 ◽  
Vol 78 (2) ◽  
pp. 285-303 ◽  
Author(s):  
K. Yamashita ◽  
M. Imai ◽  
M. Matsuno ◽  
A. Sato
Keyword(s):  
Plastic Deformation ◽  
Antiphase Boundary
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