A Poisson‐Nernst‐Planck Model of Ion Transport and Interface Segregation in Metal‐Insulator‐ Semiconductor Structures and Solar Cells

Interface Segregation

Advantages of metal-insulator-semiconductor structures for silicon solar cells

Solar Cells ◽

10.1016/0379-6787(83)90036-4 ◽

1983 ◽

Vol 8 (1) ◽

pp. 3-16 ◽

Cited By ~ 43

Author(s):

M.A. Green ◽

A.W. Blakers

Keyword(s):

Solar Cells ◽

Silicon Solar Cells ◽

Metal Insulator ◽

Influence of ultrashort pulses of electromagnetic radiation on parameters of metal-insulator-semiconductor structures

Semiconductors ◽

10.1134/1.1836058 ◽

2004 ◽

Vol 38 (12) ◽

pp. 1390-1393

Author(s):

V. A. Terekhov ◽

A. N. Man’ko ◽

E. N. Bormontov ◽

V. N. Levchenko ◽

S. Yu. Trebunskikh ◽

...

Keyword(s):

Electromagnetic Radiation ◽

Ultrashort Pulses ◽

Metal Insulator ◽

5112. Strains and photovoltaic response in Ta-sputtered Si metal-insulator-semiconductor solar cells

Vacuum ◽

10.1016/0042-207x(82)94145-8 ◽

1982 ◽

Vol 32 (7) ◽

pp. 447

Keyword(s):

Solar Cells ◽

Metal Insulator ◽

Photovoltaic Response

Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1806439 ◽

2004 ◽

Vol 22 (6) ◽

pp. 2379-2383 ◽

Cited By ~ 24

Author(s):

Choelhwyi Bae ◽

Cristiano Krug ◽

Gerald Lucovsky

Keyword(s):

Electron Trapping ◽

Metal Insulator ◽

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

Applied Physics Letters ◽

10.1063/1.4891532 ◽

2014 ◽

Vol 105 (3) ◽

pp. 033512 ◽

Cited By ~ 52

Author(s):

P. Lagger ◽

P. Steinschifter ◽

M. Reiner ◽

M. Stadtmüller ◽

G. Denifl ◽

...

Keyword(s):

Gate Bias ◽

Metal Insulator ◽

Dielectric Barrier ◽

Bias Stress ◽

Charging Dynamics ◽

Gate Bias Stress

Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/0040-6090(87)90317-8 ◽

1987 ◽

Vol 148 (3) ◽

pp. 243-250 ◽

Cited By ~ 9

Author(s):

K.G. Germanova ◽

E.P. Valcheva

Keyword(s):

Electrical Properties ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Insulator ◽

Electrical properties of metal-insulator-metal and metal-insulator-semiconductor structures containing Langmuir-Blodgett insulating multilayers

Thin Solid Films ◽

10.1016/0040-6090(89)90173-9 ◽

1989 ◽

Vol 179 (1-2) ◽

pp. 121-127 ◽

Cited By ~ 12

Author(s):

F Kaneko ◽

M Shibata ◽

Y Inaba ◽

S Kobayashi

Keyword(s):

Electrical Properties ◽

Metal Insulator ◽

Langmuir Blodgett ◽

Metal Insulator Metal

The forming process in resistive-memory elements based on metal-insulator-semiconductor structures

Technical Physics Letters ◽

10.1134/s1063785014100137 ◽

2014 ◽

Vol 40 (10) ◽

pp. 837-840 ◽

Cited By ~ 8

Author(s):

S. V. Tikhov ◽

O. N. Gorshkov ◽

I. N. Antonov ◽

A. P. Kasatkin ◽

M. N. Koryazhkina

Keyword(s):

Resistive Memory ◽

Forming Process ◽

Metal Insulator ◽

Casimir force pressure on the insulating layer in metal-insulator-semiconductor structures

Physics of the Solid State ◽

10.1134/s1063783411090174 ◽

2011 ◽

Vol 53 (9) ◽

pp. 1921-1926 ◽

Cited By ~ 1

Author(s):

G. L. Klimchitskaya ◽

A. B. Fedortsov ◽

Yu. V. Churkin ◽

V. A. Yurova

Keyword(s):

Casimir Force ◽

Metal Insulator ◽

Insulating Layer ◽

Force Pressure

A pinhole model for metal-insulator-semiconductor solar cells

Solid-State Electronics ◽

10.1016/0038-1101(81)90136-2 ◽

1981 ◽

Vol 24 (11) ◽

pp. 1067-1070 ◽

Cited By ~ 9

Author(s):

A. Rothwarf ◽

I. Pereyra

Keyword(s):

Solar Cells ◽

Metal Insulator ◽

Pinhole Model