Cathodoluminescence characterization of [110]-oriented InGaN/GaN thin films grown onr-plane sapphire substrates by metalorganic vapor-phase epitaxy

2007 ◽  
Vol 4 (7) ◽  
pp. 2544-2547 ◽  
Author(s):  
K. Kusakabe ◽  
T. Furuzuki ◽  
K. Ohkawa
1996 ◽  
Vol 69 (7) ◽  
pp. 937-939 ◽  
Author(s):  
Hyuk‐Joo Kwon ◽  
Yong‐Hyun Lee ◽  
Osamu Miki ◽  
Hirofumi Yamano ◽  
Akira Yoshida

2005 ◽  
Vol 892 ◽  
Author(s):  
Kazuhide Kusakabe ◽  
Shizutoshi Ando ◽  
Kazuhiro Ohkawa

AbstractNonpolara-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. Thea-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and thec-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in thea-plane GaN tilt mosaic measured by XRC.


2015 ◽  
Vol 31 ◽  
pp. 100-105 ◽  
Author(s):  
C. Bilel ◽  
H. Fitouri ◽  
I. Zaied ◽  
A. Bchetnia ◽  
A. Rebey ◽  
...  

2015 ◽  
Vol 217 ◽  
pp. 21-24 ◽  
Author(s):  
H. Fitouri ◽  
C. Bilel ◽  
I. Zaied ◽  
A. Bchetnia ◽  
A. Rebey ◽  
...  

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