Isotropic interface roughness of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

2008 ◽  
Vol 5 (9) ◽  
pp. 2753-2755
Author(s):  
T. Kitada ◽  
S. Kusuonki ◽  
M. Kinouchi ◽  
K. Morita ◽  
T. Isu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Interface Roughness ◽  
Inp Substrates

Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in molecular beam epitaxy

1989 ◽  
Vol 55 (1) ◽  
pp. 50-52 ◽  
Author(s):  
Ch. Maierhofer ◽  
S. Munnix ◽  
D. Bimberg ◽  
R. K. Bauer ◽  
D. E. Mars ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Rates ◽  
Molecular Beam ◽  
Interface Roughness ◽  
Trap Concentration

Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

1998 ◽  
Vol 27 (9) ◽  
pp. 1043-1046 ◽  
Author(s):  
Takahiro Kitada ◽  
Tatsuya Saeki ◽  
Masanobu Ohashi ◽  
Satoshi Shimomura ◽  
Akira Adachi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Inp Substrates
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