Interface roughness characterization by electron mobility of pseudomorphic In[sub 0.74]Ga[sub 0.26]As∕In[sub 0.52]Al[sub 0.48]As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxy

2005 ◽  
Vol 23 (3) ◽  
pp. 1154 ◽  
Author(s):  
S. Katoh ◽  
H. Sagisaka ◽  
M. Yamamoto ◽  
I. Watanabe ◽  
T. Kitada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Interface Roughness ◽  
Inp Substrates

Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in molecular beam epitaxy

1989 ◽  
Vol 55 (1) ◽  
pp. 50-52 ◽  
Author(s):  
Ch. Maierhofer ◽  
S. Munnix ◽  
D. Bimberg ◽  
R. K. Bauer ◽  
D. E. Mars ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Rates ◽  
Molecular Beam ◽  
Interface Roughness ◽  
Trap Concentration

Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

1998 ◽  
Vol 27 (9) ◽  
pp. 1043-1046 ◽  
Author(s):  
Takahiro Kitada ◽  
Tatsuya Saeki ◽  
Masanobu Ohashi ◽  
Satoshi Shimomura ◽  
Akira Adachi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Inp Substrates

Electron Transport in InAs/AlSb Quantum Wells: Interface Sequencing Effects

1989 ◽  
Vol 145 ◽  
Author(s):  
Gary Tuttle ◽  
Herbert Kroemer ◽  
John H. English
Keyword(s):  
Electron Transport ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Antisite Defect ◽  
The Other ◽  
Defect Model ◽  
Bottom Interface ◽  
Different Types

AbstractWe present data on electron transport in AlSb/InAs/AlSb quantum wells grown by molecular beam epitaxy. Because both anion and cation change across an InAs/Alsb interface, it is possible to grow such wells with two different types of interfaces, one with an InSb-like bond configuration, the other AlAs-like. Electron mobility and concentration were found to depend very strongly on the manner in which the quantum well's interfaces were grown, with high mobilities seen only if the bottom interface is InSb-like. An As-on-Al sites antisite defect model is postulated for bottom AlAs-like interfaces.

scholarly journals InP and InGaAs grown on InP substrate by molecular beam epitaxy

2022 ◽  
Vol 355 ◽  
pp. 03047
Author(s):  
Hailong Yu ◽  
Hanchao Gao ◽  
Wei Wang ◽  
Ben Ma ◽  
Zhijun Yin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Growth Temperature ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Strongly Correlated ◽  
Inp Substrate ◽  
Inp Substrates

InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio. The InGaAs layers using As2 were compared with the layers grown using As4 from a Riber standard cracker cell. When As4 is used, the highest electron mobility of InGaAs is 3960 cm2/(V·s) with the V/III ratio of 65. When converted to As2, the V/III ratio with the highest electron mobility decreased to 20. With the arsenic cracker temperature decreased from 950 ℃ to 830 ℃, the electron mobility increased from 4090 cm2/(V • s) to 5060 cm2/(V • s).

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