Super-flat interfaces in pseudomorphic In[sub 0.72]Ga[sub 0.28]As/In[sub 0.52]Al[sub 0.48]As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591435 ◽

2000 ◽

Vol 18 (3) ◽

pp. 1598 ◽

Author(s):

Toyohiro Aoki ◽

Takahiro Kitada ◽

Satoshi Shimomura ◽

Satoshi Hiyamizu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

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Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1807023 ◽

2004 ◽

Vol 85 (18) ◽

pp. 4043-4045 ◽

Author(s):

T. Kitada ◽

T. Aoki ◽

I. Watanabe ◽

S. Shimomura ◽

S. Hiyamizu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

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Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-998-0161-9 ◽

1998 ◽

Vol 27 (9) ◽

pp. 1043-1046 ◽

Author(s):

Takahiro Kitada ◽

Tatsuya Saeki ◽

Masanobu Ohashi ◽

Satoshi Shimomura ◽

Akira Adachi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

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Interface roughness characterization by electron mobility of pseudomorphic In[sub 0.74]Ga[sub 0.26]As∕In[sub 0.52]Al[sub 0.48]As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1868713 ◽

2005 ◽

Vol 23 (3) ◽

pp. 1154 ◽

Author(s):

S. Katoh ◽

H. Sagisaka ◽

M. Yamamoto ◽

I. Watanabe ◽

T. Kitada ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Electron Mobility ◽

Molecular Beam ◽

Interface Roughness ◽

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Optical and structural properties of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multiple quantum wells grown on vicinal (110) InP substrates by molecular beam epitaxy

Seventh International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.1995.522103 ◽

2002 ◽

Author(s):

H. Asai ◽

K. Oe ◽

H. Iwamura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Structural Properties ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

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Isotropic interface roughness of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

physica status solidi (c) ◽

10.1002/pssc.200779184 ◽

2008 ◽

Vol 5 (9) ◽

pp. 2753-2755

Author(s):

T. Kitada ◽

S. Kusuonki ◽

M. Kinouchi ◽

K. Morita ◽

T. Isu ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Interface Roughness ◽

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Study of ZnCdSe/ZnSe quantum wells grown by molecular-beam epitaxy on ZnSe substrates

Semiconductors ◽

10.1134/1.1187214 ◽

1997 ◽

Vol 31 (6) ◽

pp. 545 ◽

Author(s):

V. I. Kozlovskiı̆

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

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GaAs/AlGaAs quantum wells grown over epitaxial CoAl layers with molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586115 ◽

1992 ◽

Vol 10 (2) ◽

pp. 783 ◽

Author(s):

W. D. Goodhue

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

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Growth and Characterization of InGaN/GaN Multiple Quantum Wells on Ga-Polarity GaN by Plasma-Assisted Molecular Beam Epitaxy

physica status solidi (b) ◽

10.1002/1521-3951(200111)228:1<99::aid-pssb99>3.0.co;2-2 ◽

2001 ◽

Vol 228 (1) ◽

pp. 99-102 ◽

Author(s):

X.Q. Shen ◽

T. Ide ◽

M. Shimizu ◽

F. Sasaki ◽

H. Okumura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Multiple Quantum

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Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583572 ◽

1986 ◽

Vol 4 (4) ◽

pp. 1014 ◽

Author(s):

D. Bimberg

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Structural Changes ◽

Luminescence Efficiency ◽

Growth Interruption

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Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

Journal of Applied Physics ◽

10.1063/1.348908 ◽

1991 ◽

Vol 69 (11) ◽

pp. 7942-7944 ◽

Author(s):

K. T. Shiralagi ◽

R. A. Puechner ◽

K. Y. Choi ◽

R. Droopad ◽

G. N. Maracas

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Wells ◽

Molecular Beam ◽

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