1-2 ML thick InN-based quantum wells with InGaN barriers for blue-green light emitters

2009 ◽  
Vol 6 (S2) ◽  
pp. S417-S420 ◽  
Author(s):  
Akihiko Yuki ◽  
Hiroshi Watanabe ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Quantum Wells ◽  
Green Light ◽  
Light Emitters

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

Control of Barrier Width in Perovskite Multiple Quantum Wells for High Performance Green Light–Emitting Diodes

2018 ◽  
Vol 7 (3) ◽  
pp. 1801575 ◽  
Author(s):  
Maotao Yu ◽  
Chang Yi ◽  
Nana Wang ◽  
Liangdong Zhang ◽  
Renmeng Zou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Barrier Width ◽  
Light Emitting

II–VI blue-green light emitters

1996 ◽  
Vol 159 (1-4) ◽  
pp. 555-565 ◽  
Author(s):  
A. Ishibashi
Keyword(s):  
Green Light ◽  
Light Emitters

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting

Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

2016 ◽  
Vol 120 (10) ◽  
pp. 103102 ◽  
Author(s):  
Lu Han ◽  
Kathleen Kash ◽  
Hongping Zhao
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Type Ii ◽  
Light Emitting
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