Characterization of assembled quantum dots and single-electron transistors by photoemission and photoabsorption

2010 ◽  
Vol 7 (11-12) ◽  
pp. 2671-2674 ◽  
Author(s):  
Ioan Bâldea ◽  
Horst Köppel ◽  
Lorenz S. Cederbaum
Keyword(s):  
Quantum Dots ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

AIP Advances ◽  
2014 ◽  
Vol 4 (11) ◽  
pp. 117126 ◽  
Author(s):  
L. Arzubiaga ◽  
F. Golmar ◽  
R. Llopis ◽  
F. Casanova ◽  
L. E. Hueso
Keyword(s):  
Electrical Characterization ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors

1997 ◽  
Author(s):  
Seiya Kasai ◽  
Yoshihiro Satoh ◽  
Hiroshi Okada ◽  
Tamotsu Hashizume ◽  
Hideki Hasegawa
Keyword(s):  
Quantum Dots ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Gate Control ◽  
Electron Transistors

scholarly journals Light Sensor Platform Based on the Integration of Bacteriorhodopsin with a Single Electron Transistor

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Karl A. Walczak ◽  
Paul L. Bergstrom ◽  
Craig R. Friedrich
Keyword(s):  
Incident Light ◽  
Active Regions ◽  
Purple Membrane ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Minimal Impact ◽  
Hybrid Device ◽  
Sensor Platform ◽  
Electron Transistors

This paper reports on the integration of an optical protein with single electron transistors to form a nano-bio-hybrid device for sensing. Bacteriorhodopsin (bR) is an optoelectric protein that translocates a proton across a distance of several nanometers in response to an absorbed photon of incident light. This charge gradient results in a measurable voltage in the dried state. Single electron transistors (SETs) have active regions consisting of one or more quantum islands with a size typically 10 nanometers or less. Integrating bacteriorhodopsin with the gate of a SET provides a device capable of a modulated electrical output in response to optical modulation at the device gate. Modulation of the optoelectric activity of the bR by chemical binding with a targeted environmental antigen can form a direct chemical-to-electrical sensor reducing the size and complexity of fluorescence-based systems. The work resulted in electrical resistance and capacitance characterization of purple membrane containing bR under variable illumination to ensure minimal impact on SET operation. Purple membrane containing bacteriorhodopsin was electrodeposited on the SET gates, and current throughput was well correlated with variable and cyclic illumination. It was confirmed that bR optoelectric activity is capable of driving SETs.

scholarly journals Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Raisei Mizokuchi ◽  
Sinan Bugu ◽  
Masaru Hirayama ◽  
Jun Yoneda ◽  
Tetsuo Kodera
Keyword(s):  
Quantum Dots ◽  
Radio Frequency ◽  
Impedance Matching ◽  
Electrical Circuit ◽  
Phase Response ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Large Phase ◽  
Electron Transistors

AbstractRadio-frequency reflectometry techniques are instrumental for spin qubit readout in semiconductor quantum dots. However, a large phase response is difficult to achieve in practice. In this work, we report radio-frequency single electron transistors using physically defined quantum dots in silicon-on-insulator. We study quantum dots which do not have the top gate structure considered to hinder radio frequency reflectometry measurements using physically defined quantum dots. Based on the model which properly takes into account the parasitic components, we precisely determine the gate-dependent device admittance. Clear Coulomb peaks are observed in the amplitude and the phase of the reflection coefficient, with a remarkably large phase signal of ∼45°. Electrical circuit analysis indicates that it can be attributed to a good impedance matching and a detuning from the resonance frequency. We anticipate that our results will be useful in designing and simulating reflectometry circuits to optimize qubit readout sensitivity and speed.

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