Highly conductive titanium oxide films by RF magnetron sputtering

2011 ◽  
Vol 8 (9) ◽  
pp. 2742-2745 ◽  
Author(s):  
Koichi Sakaguchi ◽  
Masaki Fukazawa ◽  
Koichi Shimakawa ◽  
Yoshinori Hatanaka
2005 ◽  
Vol 288-289 ◽  
pp. 311-314 ◽  
Author(s):  
Yong Xiang Leng ◽  
Ping Yang ◽  
Ji Yong Chen ◽  
Lan Xin Xu ◽  
An Sha Zhao ◽  
...  

Surface modification has shown great potential for improving the hemocompatibility of biomedical materials and devices. In this paper we describe our work on improving blood compatibility with Ti–O thin films prepared by unbalanced DC magnetron sputtering. The structure and surface chemical and physical properties of the films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy (XPS), SEM, sheet resistance tests, and Hall effect measurements. The sheet resistance of the titanium oxide samples increased with oxygen pressure and shows a sharp increase when only TiO2 exists in the films. The band gap, carrier density and sheet resistance of the titanium oxide films synthesized at different oxygen pressure are different. These properties affect blood compatibility significantly. We suggest that the semiconducting nature of n-type Ti–O films with bandgap 3.0~3.2 eV, sheet resistance greater than 1 Ω.cm and carrier density of about 1.17 x 1016cm-2 leads to their excellent blood compatibility.


2005 ◽  
Vol 288-289 ◽  
pp. 299-302
Author(s):  
Lan Xin Xu ◽  
Yong Xiang Leng ◽  
Hong Fang Zhou ◽  
Y.W. Liu ◽  
Nan Huang

Titanium oxide films were prepared by reactive magnetron sputtering using continuous or pulsed DC sputtering power. The results of the structure and vitro hemocompatibility analyses indicated that non-stoichiometric titanium oxide films possess better hemocompatibility than LTIC and that the hemocompatibility of the titanium oxide films are evidently improved with the increase of rutile phase. This can result from the lower interface tension between titanium oxide films and biological substances and lower ratio of dispersive and polar component of the surface energy.


2011 ◽  
Vol 206 (5) ◽  
pp. 967-971 ◽  
Author(s):  
F.J. Jing ◽  
K. Yukimura ◽  
H. Kato ◽  
Y.F. Lei ◽  
T.X. You ◽  
...  

2008 ◽  
Vol 373-374 ◽  
pp. 138-141
Author(s):  
Feng Qi ◽  
Yong Xiang Leng ◽  
H. Sun ◽  
Nan Huang

The magnetic filed arrangement of unbalance magnetron sputtering can be changed employed to expand the plasma region and induce more ions to bombard the films for fabricating excellent quality films. In this paper, four targets closed-filed unbalance magnetron sputtering was introduced, the effect of the different magnetic field arrangement on the titanium oxide films properties was investigated. By changing the distance from target to vacuum center, the different unbalance state of the magnetic field was formed around the substrate. The titanium oxide films were synthesized at different unbalance state of the magnetic field. The microstructure of the titanium oxide films was studied by X-Ray Diffraction (XRD), and the residual stress measurement for the films was determined by grazing incidence XRD. The results revealed that the higher unbalance of the magnetic field around the substrate, the higher ion current of the substrate. Comparing with increasing the substrate bias voltage, the ion current increased 2~4 times through changing magnetic field arrangement to induce higher unbalance of the magnetic field. Ion/atom ratio increase was in favor of rutile phase formation for titanium oxide film. The unbalance state increase resulted in more higher compressive stress in the films.


2008 ◽  
Vol 8 (5) ◽  
pp. 2659-2664 ◽  
Author(s):  
Hong-Hsin Huang ◽  
Chia-Chen Huang ◽  
Ping-Chih Huang ◽  
Cheng-Fu Yang ◽  
Ching-Yun Hsu

Titanium oxide films were prepared by RF magnetron sputtering onto glass substrates. The effects of RF power and deposition temperature on crystalline structure, morphology and energy gap were investigated, which were analyzed by X-ray diffraction, SEM and UV-Vis spectrometer, respectively. Results show that rutile phase is the favored structure during deposition. Applying RF power in the range of 50–250 W, the amorphous, rutile, and both rutile and anatase phases TiO2 films were obtained in sequence, while the content of anatase is similar in the range of 34–37% although the RF power increases. Increasing the deposition temperature, the anatase phase coexists in the rutile phase in the range of 100–200 °C, and the content of anatase increases from 20 to 41% with the deposition temperature. In addition, according to the morphology observation, the granulous surface is found in rutile phase while facetted surface in anatase phase when titanium oxide films deposited at various RF powers and substrate temperatures. The band gap energy of titanium oxide evaluated from (αhν)1/2 versus energy plots show that the energy gap decreases with RF power increasing.


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