Diode laser annealing on sputtered epitaxial Cu2 ZnSnS4 thin films

2017 ◽  
Vol 11 (5) ◽  
pp. 1700033 ◽  
Author(s):  
Ning Song ◽  
Jialiang Huang ◽  
Martin A. Green ◽  
Xiaojing Hao
Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich

1998 ◽  
Vol 20 (1-4) ◽  
pp. 87-94
Author(s):  
Atsushi Ito ◽  
Akihiko Machida ◽  
Minoru Obara

1987 ◽  
Vol 23 (2) ◽  
pp. 233
Author(s):  
A. Venkert ◽  
Y. Zeiri ◽  
J. Bloch
Keyword(s):  

2000 ◽  
Vol 375 (1-2) ◽  
pp. 172-175 ◽  
Author(s):  
Zhigang Zhang ◽  
Jinsong Zhu ◽  
Dong Su ◽  
Jianshe Liu ◽  
Huiming Shen ◽  
...  
Keyword(s):  

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.


2010 ◽  
Vol 5 ◽  
pp. 109-117 ◽  
Author(s):  
N. Lichtenstein ◽  
R. Baettig ◽  
R. Brunner ◽  
J. Müller ◽  
B. Valk ◽  
...  

2006 ◽  
Vol 45 (5B) ◽  
pp. 4344-4346 ◽  
Author(s):  
Shinji Munetoh ◽  
Takahide Kuranaga ◽  
Byoung Min Lee ◽  
Teruaki Motooka ◽  
Takahiko Endo ◽  
...  

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