Enhancement of minority carrier lifetimes in n- and p-type silicon wafers using silver nanoparticle layers

2015 ◽  
Vol 49 (1) ◽  
pp. 015302 ◽  
Author(s):  
Eshwar Thouti ◽  
Sanjai Kumar ◽  
Vamsi K Komarala
Keyword(s):  
Silver Nanoparticle ◽  
Minority Carrier ◽  
Silicon Wafers ◽  
Carrier Lifetimes ◽  
Type Silicon ◽  
Minority Carrier Lifetimes ◽  
P Type

Growth of NLO Chalcopyrite Materials by Omvpe

1997 ◽  
Vol 484 ◽  
Author(s):  
M. L. Timmons ◽  
K. J. Bachmann
Keyword(s):  
Vapor Phase ◽  
Minority Carrier ◽  
Organometallic Vapor Phase Epitaxy ◽  
Lattice Match ◽  
Mid Infrared ◽  
Figures Of Merit ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Infrared Materials ◽  
P Type

AbstractThis paper describes the application of organometallic vapor phase epitaxy to the growth of II-1V-V2 chalcopyrite materials that have high figures of merit for nonlinear optical (NLO) applications. ZnGeAs2, although not a particularly interesting NLO material, is used as a model for the growth of ZnGeP2, which is. Both compounds, as well as others, have been successfully grown by vapor phase on III-V substrates that provide a close lattice match. Doping studies using Group II and VI elements have been undertaken to control the p-type conductivity found in both compounds. Except for the possible case of indium, the results of these experiments are less than encouraging. Minority-carrier lifetimes of 150 ns have been measured in ZnGeAs2.The results of this work are used to make projections about the growth of CdGeAs2. CdGeAs2 is promising for the next generation of NLO mid-infrared materials if an absorption band that occurs at about 5 μm can be reduced. The growth projections suggest that this compound will be difficult to grow epitaxially and has no III-V substrate that provides a close lattice match. Mixing CdGeAs2 with other II-IV-V2 materials may offer solutions to the substrate problem. The defect properties of CdGeAs2 have not, to our knowledge, been studied.

Aligned-Crystalline Si Films on Glass

2008 ◽  
Vol 1066 ◽  
Author(s):  
Alp T. Findikoglu ◽  
Ozan Ugurlu ◽  
Terry G. Holesinger
Keyword(s):  
Doping Concentration ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
Carrier Lifetimes ◽  
Glass Substrates ◽  
Structural And Electronic Properties ◽  
Minority Carrier Lifetimes ◽  
Si Films ◽  
P Type

ABSTRACTWe report structural and electronic properties of Aligned-Crystalline Si (ACSi) films on glass substrates. These films show enhanced majority carrier mobilities and minority carrier lifetimes with increasing crystallinity, i.e., with improving alignment and connectivity of the grains. A 0.4-μm-thick ACSi film with a total grain mosaic spread of 4.2° showed Hall mobility of 47 cm2/V.s for a p-type doping concentration of 1.9×1018 cm−3. A prototype n+/p/p+–type diode fabricated using a 4.2-μm-thick ACSi film showed minority carrier lifetime of ∼3.5 μs and estimated diffusion length of ∼30 μm in the p layer with a doping concentration of 5×1016 cm−3.

Formation of p-n Junctions by Laser Processing Sb-Pt Thin Films on Si

1981 ◽  
Vol 4 ◽  
Author(s):  
R. J. Schutz ◽  
G. K. Celler ◽  
C. C. Chang
Keyword(s):  
Electrical Properties ◽  
Laser Processing ◽  
Minority Carrier ◽  
X Ray Diffraction ◽  
X Ray ◽  
Depth Profiles ◽  
Carrier Lifetimes ◽  
Structural And Electrical Properties ◽  
Minority Carrier Lifetimes ◽  
P Type

ABSTRACTPlanar p-n junctions with Pt silicide contacts have been formed by laser irradiating p-type Si/120Å Sb/400Å Pt composite thin film structures. The samples were prepared in a standard e-beam evaporation system. They were never ion implanted. Laser processing was performed with either a scanning cw Ar laser or a Q-switched Nd:YAG (λ = 0.53 μm) laser which provided 100 nsec long pulses. After the irradiations were performed, a p-type Si/n+Si/Pt-Si structure was present. The n+ region resulted from Sb incorporated in the Si lattice. When the same initial composite was furnace annealed, the Sb diffused to the surface and sublimated, leaving a p-type Si/PtSi near-ohmic contact. Depth profiles of the samples were determined with Auger electron spectroscopy. The structure of the Pt-Si layer was studied using wide film Debye X-ray diffraction. The electrical properties of the junctions were examined by measuring their I-V and C-V characteristics and minority carrier lifetimes. Differences in the structural and electrical properties that resulted from the two types of laser irradiation will be discussed.

Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

1995 ◽  
Vol 67 (1) ◽  
pp. 88-90 ◽  
Author(s):  
D. C. Leung ◽  
P. R. Nelson ◽  
O. M. Stafsudd ◽  
J. B. Parkinson ◽  
G. E. Davis
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Type Silicon ◽  
P Type
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