30-4: Characterization of Si Thin Films Doped by Wet-Chemical Laser Processing

A series of tourmaline/ZnO composite thin films were prepared by the facile route of low-temperature wet chemical method. X-ray diffraction (XRD) and Raman Spectroscopy analyses showed the hybrid spectroscopic characters of tourmaline and ZnO. With adding the different amount of tourmaline powder, ZnO tended to exhibit the different peak intensity of X-ray diffraction and Raman vibration. ZnO deposited into bending nanosheets and intersected to upstanding nanostucture on the surface of tourmaline particles in SEM images. The optical adsorption properities obtained by the UV-Vis spectra indicated that the addition of tourmaline had enhanced the maximum absorption strength, and had shifted the absorption wavelength and the absorption range of ZnO crystals.

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UV irradiated wet chemical deposition and characterization of nanostructured tin sulfide thin films

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-012-0814-6 ◽

2012 ◽

Vol 23 (12) ◽

pp. 2264-2271 ◽

Cited By ~ 4

Author(s):

A. J. Ragina ◽

K. V. Murali ◽

K. C. Preetha ◽

K. Deepa ◽

T. L. Remadevi

Keyword(s):

Thin Films ◽

Chemical Deposition ◽

Tin Sulfide ◽

Wet Chemical

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PREPARATION AND CHARACTERIZATION OF THERMAL EVAPORATED BATIO3 THIN FILMS

Kongunadu Research Journal ◽

10.26524/krj140 ◽

2016 ◽

Vol 3 (2) ◽

pp. 14-16

Author(s):

Sengodan R ◽

Chandar Shekar B

Keyword(s):

Thin Films ◽

Quartz Crystal ◽

Sem Analysis ◽

Wet Chemical Method ◽

X Ray ◽

Glass Substrates ◽

Wet Chemical ◽

Deposited Film ◽

Batio3 Nanoparticles

Thermal evaporated Barium titanate (BaTiO3) thin films were prepared on to well cleaned glass substrates under the vacuum of 2 x10-5 torr, using 12A4 Hind Hivac coating unit from the BaTiO3 nanoparticles synthesized by using wet chemical method. The thickness of the film was measured by Quartz crystal monitor. From X-ray analysis, it has been found that the deposited film was polycrystalline in nature. SEM analysis revealed that grains of various sizes having tetragonal shape were uniformly distributed throughout the surface of the film. The dependence of capacitance and loss factor on frequency and temperature were investigated and results are discussed.

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Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154937 ◽

1989 ◽

Vol 47 ◽

pp. 592-593

Author(s):

J.B. Posthill ◽

R.P. Burns ◽

R.A. Rudder ◽

Y.H. Lee ◽

R.J. Markunas ◽

...

Keyword(s):

Thin Films ◽

Wide Band ◽

Deposition Process ◽

Heteroepitaxial Growth ◽

Electron Microscopic ◽

Wide Band Gap ◽

Lattice Matching ◽

Different Types ◽

Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

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