37.2:
            Invited Paper:
            Interfacial Engineering for Improving the Device Performance of Cadmium‐Free Quantum Dot‐based Electroluminescent Device

For nanowire-based sources of non-classical light, the rate at which photons are generated and the ability to efficiently collect them are determined by the nanowire geometry. Using selective-area vapour-liquid-solid epitaxy, we show how it is possible to control the nanowire geometry and tailor it to optimise device performance. High efficiency single photon generation with negligible multi-photon emission is demonstrated using a quantum dot embedded in a nanowire having a geometry tailored to optimise both collection efficiency and emission rate.

Download Full-text

Investigation of Quantum Dot Solar Cell Device Performance

MRS Proceedings ◽

10.1557/opl.2013.959 ◽

2013 ◽

Vol 1551 ◽

pp. 137-142

Author(s):

Neil S. Beattie ◽

Guillaume Zoppi ◽

Ian Farrer ◽

Patrick See ◽

Robert W. Miles ◽

...

Keyword(s):

Quantum Dots ◽

Solar Cells ◽

Solar Cell ◽

Quantum Dot ◽

Band Gap ◽

Control Device ◽

Open Circuit ◽

Device Performance ◽

Intermediate Band ◽

Control Devices

ABSTRACTThe device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.

Download Full-text

Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

Nanoscale Advances ◽

10.1039/c9na00618d ◽

2020 ◽

Vol 2 (1) ◽

pp. 401-407

Author(s):

Pei-Chieh Chiu ◽

Sheng-Hsiung Yang

Keyword(s):

Quantum Dot ◽

Light Emitting Diodes ◽

Device Performance ◽

Light Emitting ◽

Hole Transporting

A new additive BYK-P105 was blended with PEDOT:PSS as the HTL to improve the device performance of QLEDs.

Download Full-text

An inverted ZnO/P3HT:PbS bulk-heterojunction hybrid solar cell with a CdSe quantum dot interface buffer layer

RSC Advances ◽

10.1039/d0ra02740e ◽

2020 ◽

Vol 10 (28) ◽

pp. 16693-16699 ◽

Cited By ~ 2

Author(s):

Ajith Thomas ◽

R. Vinayakan ◽

V. V. Ison

Keyword(s):

Quantum Dots ◽

Solar Cell ◽

Quantum Dot ◽

Buffer Layer ◽

Active Layer ◽

Bulk Heterojunction ◽

Hybrid Solar Cell ◽

Device Performance ◽

Cdse Quantum Dots ◽

Cdse Quantum Dot

An inverted bulk-heterojunction hybrid solar cell with the structure ITO/ZnO/P3HT:PbS/Au was prepared. The device performance was enhanced by inserting an interface buffer layer of CdSe quantum dots between the ZnO and the P3HT:PbS BHJ active layer.

Download Full-text