S 2 N 2 – A 6π‐Electron Ligand with Tunable σ‐ and π‐ Donor‐Acceptor Property

2020 ◽  
Vol 5 (39) ◽  
pp. 12176-12189
Author(s):  
Mohammed N. K. Sadik ◽  
Susmita De

Langmuir ◽  
2006 ◽  
Vol 22 (10) ◽  
pp. 4480-4482 ◽  
Author(s):  
Limei Qiu ◽  
Fen Liu ◽  
Liangzhong Zhao ◽  
Wensheng Yang ◽  
Jiannian Yao


2009 ◽  
Vol 35 (2) ◽  
pp. 227-240 ◽  
Author(s):  
Hiromasa Nishikiori ◽  
Nobuaki Tanaka ◽  
Yukio Isowaki ◽  
Yoshihisa Tanno ◽  
Takeshi Nomoto ◽  
...  






1992 ◽  
Vol 89 ◽  
pp. 1615-1622 ◽  
Author(s):  
S Spange ◽  
D Keutel ◽  
F Simon


1980 ◽  
Vol 41 (7) ◽  
pp. 707-712 ◽  
Author(s):  
A. Poure ◽  
G. Aguero ◽  
G. Masse ◽  
J.P. Aicardi




2008 ◽  
Author(s):  
Derck Schlettwein ◽  
Robin Knecht ◽  
Dominik Klaus ◽  
Christopher Keil ◽  
Günter Schnurpfeil


1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.



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