scholarly journals Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect Transistors

Small ◽  
2011 ◽  
Vol 8 (2) ◽  
pp. 241-245 ◽  
Author(s):  
Fatemeh Gholamrezaie ◽  
Anne-Marije Andringa ◽  
W. S. Christian Roelofs ◽  
Alfred Neuhold ◽  
Martijn Kemerink ◽  
...  
2011 ◽  
Vol 161 (21-22) ◽  
pp. 2226-2229 ◽  
Author(s):  
Fatemeh Gholamrezaie ◽  
Kamal Asadi ◽  
Romero A.H.J. Kicken ◽  
Bea M.W. Langeveld-Voss ◽  
Dago M. de Leeuw ◽  
...  

2006 ◽  
Vol 965 ◽  
Author(s):  
Nobuya Hiroshiba ◽  
Ryotaro Kumashiro ◽  
Naoya Komatsu ◽  
Yusuke Suto ◽  
Hisao Ishii ◽  
...  

ABSTRACTThe influences of self-assembled-monolayers (SAMs) modifications on the gold electrodes in organic field effect transistors are studied using benzen-thiols (BzTs) having amino (NH2), nitro (NO2) and methyl (CH3) substituents and pentacene as an organic semiconductor. The field effect transistor (FET) characteristics are found to be very sensitive to the preparation condition of the SAMs modified surfaces. This can be rationalized in terms of the barriers against carrier injections made by SAMs and this situation can be monitored using a surface contact-angle method. The enhancement in the field effect mobilities μ is observed when the SAMs modifications to the electrodes are applied, and this could be caused by the higher efficiency of carrier injection attained by the hole transfer from SAMs to pentacene molecules.


2009 ◽  
Vol 131 (26) ◽  
pp. 9396-9404 ◽  
Author(s):  
Yutaka Ito ◽  
Ajay A. Virkar ◽  
Stefan Mannsfeld ◽  
Joon Hak Oh ◽  
Michael Toney ◽  
...  

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