Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Small ◽  
2021 ◽  
pp. 2008017
Author(s):  
Bei Jiang ◽  
Shiwei Wang ◽  
Jingyu Sun ◽  
Zhongfan Liu
Nano Letters ◽  
2010 ◽  
Vol 10 (2) ◽  
pp. 490-493 ◽  
Author(s):  
Youngbin Lee ◽  
Sukang Bae ◽  
Houk Jang ◽  
Sukjae Jang ◽  
Shou-En Zhu ◽  
...  
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2010 ◽  
Vol 97 (25) ◽  
pp. 252101 ◽  
Author(s):  
Wei Pan ◽  
Stephen W. Howell ◽  
Anthony Joseph Ross ◽  
Taisuke Ohta ◽  
Thomas A. Friedmann

Nature ◽  
2013 ◽  
Vol 505 (7482) ◽  
pp. 190-194 ◽  
Author(s):  
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Guang-Xin Ni ◽  
Yanpeng Liu ◽  
Bo Liu ◽  
Antonio H. Castro Neto ◽  
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Vol 10 (1) ◽  
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Mao-Lin Chen ◽  
Lichang Yin ◽  
Zhibo Liu ◽  
Hui Li ◽  
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2010 ◽  
Vol 1259 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Glenn G. Jernigan ◽  
James C. Culbertson ◽  
...  

AbstractEpitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.


2010 ◽  
Vol 645-648 ◽  
pp. 633-636 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
James C. Culbertson ◽  
Glenn G. Jernigan ◽  
...  

Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit high carrier mobilities, in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. We will report on the impact that these transfer processes has upon the electrical properties of the transferred EG films.


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pp. 42093-42101 ◽  
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Nano Letters ◽  
2010 ◽  
Vol 10 (11) ◽  
pp. 4702-4707 ◽  
Author(s):  
Seunghyun Lee ◽  
Kyunghoon Lee ◽  
Zhaohui Zhong

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