Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 633-636 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
James C. Culbertson ◽  
Glenn G. Jernigan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Wafer Scale ◽  
Transfer Processes ◽  
Thermal Release ◽  
Graphene Films ◽  
High Carrier ◽  
The Impact

Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit high carrier mobilities, in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. We will report on the impact that these transfer processes has upon the electrical properties of the transferred EG films.

Dry Techniques for Epitaxial Graphene Transfer

2010 ◽  
Vol 1259 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Glenn G. Jernigan ◽  
James C. Culbertson ◽  
...  
Keyword(s):  
Carrier Density ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Wafer Scale ◽  
Thermal Release ◽  
Graphene Films ◽  
Graphene Transfer ◽  
Van Der Pauw

AbstractEpitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.

Observation of the integer quantum Hall effect in high quality, uniform wafer-scale epitaxial graphene films

2010 ◽  
Vol 97 (25) ◽  
pp. 252101 ◽  
Author(s):  
Wei Pan ◽  
Stephen W. Howell ◽  
Anthony Joseph Ross ◽  
Taisuke Ohta ◽  
Thomas A. Friedmann
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Epitaxial Graphene ◽  
High Quality ◽  
Wafer Scale ◽  
Integer Quantum Hall Effect ◽  
Graphene Films ◽  
Integer Quantum

Large area uniformly oriented multilayer graphene with high transparency and conducting properties derived from highly oriented polyethylene films

2014 ◽  
Vol 2 (30) ◽  
pp. 6048-6055 ◽  
Author(s):  
Bing He ◽  
Zhongjie Ren ◽  
Shouke Yan ◽  
Zhaohui Wang
Keyword(s):  
Electrical Properties ◽  
Synthesis And Characterization ◽  
Multilayer Graphene ◽  
Optical And Electrical Properties ◽  
Large Area ◽  
High Transparency ◽  
Polyethylene Films ◽  
Graphene Films ◽  
Oriented Polyethylene

We present here the synthesis and characterization of well-ordered multilayer graphene from highly oriented polyethylene films. The obtained graphene films exhibit good optical and electrical properties.

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira
Keyword(s):  
Amorphous Silicon ◽  
High Throughput Screening ◽  
Simulation Analysis ◽  
Low Cost ◽  
Deposition Process ◽  
Large Area ◽  
Sidewall Roughness ◽  
Sensing Applications ◽  
Fabrication Defects ◽  
The Impact

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.

scholarly journals Investigation of the functional network modifier loading on the stoichiometric ratio of epoxy resins and their dielectric properties

2021 ◽  
Author(s):  
Istebreq A. Saeedi ◽  
Sunny Chaudhary ◽  
Thomas Andritsch ◽  
Alun S. Vaughan
Keyword(s):  
Glass Transition ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Epoxy Resins ◽  
Functional Network ◽  
Cross Linking ◽  
Network Modifier ◽  
Epoxy Resin System ◽  
The Cross ◽  
The Impact

AbstractReactive molecular additives have often been employed to tailor the mechanical properties of epoxy resins. In addition, several studies have reported improved electrical properties in such systems, where the network architecture and included function groups have been modified through the use of so-called functional network modifier (FNM) molecules. The study reported here set out to investigate the effect of a glycidyl polyhedral oligomeric silsesquioxane (GPOSS) FNM on the cross-linking reactions, glass transition, breakdown strength and dielectric properties of an amine-cured epoxy resin system. Since many previous studies have considered POSS to act as an inorganic filler, a key aim was to consider the impact of GPOSS addition on the stoichiometry of curing. Fourier transform infrared spectroscopy revealed significant changes in the cross-linking reactions that occur if appropriate stoichiometric compensation is not made for the additional epoxide groups present on the GPOSS. These changes, in concert with the direct effect of the GPOSS itself, influence the glass transition temperature, dielectric breakdown behaviour and dielectric response of the system. Specifically, the work shows that the inclusion of GPOSS can result in beneficial changes in electrical properties, but that these gains are easily lost if consequential changes in the matrix polymer are not appropriately counteracted. Nevertheless, if the system is appropriately optimized, materials with pronounced improvements in technologically important characteristics can be designed.

Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Small ◽  
2021 ◽  
pp. 2008017
Author(s):  
Bei Jiang ◽  
Shiwei Wang ◽  
Jingyu Sun ◽  
Zhongfan Liu
Keyword(s):  
Controllable Synthesis ◽  
Wafer Scale ◽  
Graphene Films

scholarly journals Monitoring the Impact of the Large Building Investments on the Neighborhood

2021 ◽  
Vol 11 (14) ◽  
pp. 6537
Author(s):  
Marian Łupieżowiec
Keyword(s):  
Groundwater Level ◽  
Soil Improvement ◽  
Deep Excavation ◽  
Large Area ◽  
Safety Measures ◽  
High Rise ◽  
The Impact ◽  
Large Building ◽  
Additional Safety ◽  
Made In

The article presents the concept of monitoring buildings and infrastructure elements located near large construction investments (the construction of high-rise buildings of the Oak Terraces housing estate in Katowice and the construction of a tunnel under the roundabout in Katowice along the intercity express road DTŚ). The impacts include deep excavation, lowering of the groundwater level over a large area, and dynamic influences related to the use of impact methods of soil improvement. The presented monitoring includes observation of the groundwater level with the use of piezometers, geodetic measurements of settlement and inclinations, as well as the measurement of vibration amplitudes generated during the works involving shocks and vibrations. It was also important to observe the development of cracks on the basis of a previously made inventory of damage. The results of the monitoring allow corrections to be made in the technology of works (e.g., reduction of vibration amplitudes, application of additional protections at excavations, etc.) or the use additional safety measures. Currently, there are also monitoring systems used during the operation of completed facilities.

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

Ultrahigh conductivity of large area suspended few layer graphene films

2012 ◽  
Vol 101 (26) ◽  
pp. 263101 ◽  
Author(s):  
Nima Rouhi ◽  
Yung Yu Wang ◽  
Peter J. Burke
Keyword(s):  
Large Area ◽  
Layer Graphene ◽  
Graphene Films ◽  
Few Layer Graphene
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