scholarly journals Phase Transitions in a Perovskite Thin Film Studied by Environmental In Situ Heating Nano‐Beam Electron Diffraction (Small Methods 9/2021)

Small Methods ◽  
2021 ◽  
Vol 5 (9) ◽  
pp. 2170042
Author(s):  
Tobias Meyer ◽  
Birte Kressdorf ◽  
Vladimir Roddatis ◽  
Jörg Hoffmann ◽  
Christian Jooss ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Transitions ◽  
Electron Diffraction ◽  
Beam Electron ◽  
In Situ Heating

scholarly journals Phase Transitions in a Perovskite Thin Film Studied by Environmental In Situ Heating Nano‐Beam Electron Diffraction

Small Methods ◽  
2021 ◽  
pp. 2100464
Author(s):  
Tobias Meyer ◽  
Birte Kressdorf ◽  
Vladimir Roddatis ◽  
Jörg Hoffmann ◽  
Christian Jooss ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Transitions ◽  
Electron Diffraction ◽  
Beam Electron ◽  
In Situ Heating

In situ electron diffraction study of synthetic (Ca1-xSrx)2MgSi2O7 åkermanites

2000 ◽  
Vol 215 (9) ◽  
Author(s):  
H. Rager ◽  
M. Schosnig ◽  
A.K. Schaper ◽  
A. Kutoglu ◽  
W. Treutmann
Keyword(s):  
Phase Transitions ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Diffraction Study ◽  
Solid Solutions ◽  
Transmission Electron Microscope ◽  
Electron Diffraction Study ◽  
Modulated Structure ◽  
Transmission Electron

This paper deals with transmission electron microscope experiments of Ca,Sr-åkermanite solid solutions at temperatures between 100 K and 375 K. The aim of the investigations was to study the compositional and temperature dependence of phase transitions from the normal to the incommensurately modulated structure of(Ca

In-Situ Transmission Electron Microscopy Investigation of Aluminum Induced Crystallization of Amorphous Silicon

2008 ◽  
Vol 1066 ◽  
Author(s):  
Ram Kishore ◽  
Renu Sharma ◽  
Satoshi Hata ◽  
Noriyuki Kuwano ◽  
Yoshitsuga Tomokiyo ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Amorphous Silicon ◽  
Diffraction Pattern ◽  
Electron Diffraction Pattern ◽  
Polycrystalline Silicon ◽  
Nanocrystalline Silicon ◽  
Transmission Electron ◽  
In Situ Heating ◽  
Induced Crystallization

ABSTRACTThe interaction of amorphous silicon and aluminum films to achieve polycrystalline silicon has been investigated using transmission electron microscope equipped with in-situ heating holder. Carbon coated nickel grids were used for TEM studies. An ultra high vacuum cluster tool was used for the deposition of a ∼50nm a-Si films and a vacuum deposition system was used to deposit a ∼50nm Al films on a-Si film. The microstructural features and electron diffraction in the plain view mode were observed with increase in temperature starting from room temperature to 275 °C. The specimen was loaded inside TEM heating holder. The temperature was measured and kept constant for 5 minutes during which the microstructure at fixed magnification of X63K was recorded and the electron diffraction pattern of the same area was also recorded. The temperature was then increase and fixed at desired value and microstructure and EDP were again recorded. The temperatures used in this experiment were 30, 100, 150, 200, 225, 275°C. A sequential change in microstructural features and electron diffraction pattern due to interfacial diffusion of boundary between Al and amorphous Si was investigated. Evolution of polycrystalline silicon with randomly oriented grains as a result of a-Si and Al interaction was revealed. After the in-situ heating experiment the specimen was subjected to high resolution TEM and EDS investigations after removing the excess Al. The EDS analysis of the crystallized specimen was performed to locate the Al distribution in the crystallized silicon. These studies show that the Al induced crystallization process can be used to prepare polycrystalline as well as nanocrystalline silicon by controlling the in-situ annealing parameters. The investigations are very useful as the nanocrystalline silicon is being investigated for its use in developing high efficiency silicon solar structures.

scholarly journals A Study of Recrystallization and Phase Transitions in Intermetallic Titanium Aluminides by In Situ High-Energy X-Ray Diffraction

2007 ◽  
Vol 539-543 ◽  
pp. 1519-1524 ◽  
Author(s):  
Klaus Dieter Liss ◽  
A. Bartels ◽  
Helmut Clemens ◽  
S. Bystrzanowski ◽  
A. Stark ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Titanium Aluminides ◽  
Strain Relaxation ◽  
High Energy ◽  
Internal Stresses ◽  
X Ray Diffraction ◽  
X Ray ◽  
In Situ Heating ◽  
Increasing Temperature

High-energy synchrotron X-ray diffraction is a novel and powerful tool for bulk studies of materials. In this study, it is applied for the investigation of an intermetallic γ-TiAl based alloy. Not only the diffraction angles, but also the morphology of reflections on the Debye-Scherrer rings are evaluated in order to approach lattice parameters and grain sizes as well as crystallographic relationships. An in-situ heating cycle from room temperature to 1362 °C has been conducted starting from massively transformed γ-TiAl which exhibits high internal stresses. With increasing temperature the occurrence of strain relaxation, chemical and phase separation, domain orientations, phase transitions, recrystallization processes, and subsequent grain growth can be observed. The data obtained by high-energy synchrotron X-ray diffraction, extremely rich in information, are interpreted step by step.

Sintering of Sputtered Copper Nanoparticles on (001) Copper Substrates

1996 ◽  
Vol 457 ◽  
Author(s):  
M. Yeadon ◽  
J. C. Yang ◽  
M. Ghaly ◽  
D. L. Olynick ◽  
R. S. Averback ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Diffraction ◽  
Copper Nanoparticles ◽  
Copper Substrate ◽  
Boundary Motion ◽  
Random Orientation ◽  
Dc Sputtering ◽  
Diffraction Patterns ◽  
Grain Boundary Motion

ABSTRACTThe sintering of sputtered copper nanoparticles with a thin film copper substrate has been studied in real time using a novel in-situ UHV TEM. Particles were generated by dc sputtering in argon and transferred directly into the microscope along a connecting tube. The particles were deposited onto a clean (001) copper substrate of thickness 40nm. As-deposited particles assume a random orientation on the copper substrate as evidenced by electron diffraction patterns. Upon annealing, however, the particles were observed to reorient and assume the orientation of the substrate. Reorientation of individual, isolated particles occurred at ∼200°C, primarily by grain-boundary motion and not by surface diffusion.

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