The Morphology of Platinum Black Electrodeposited on Highly Oriented Pyrolytic Graphite Studied with Scanning Electron Microscopy and Scanning Tunneling Microscopy

1997 ◽  
Vol 56 (1) ◽  
pp. 103-113 ◽  
Author(s):  
A.R. Layson ◽  
M.R. Columbia
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Scanning Tunneling Microscopy ◽  
Pyrolytic Graphite ◽  
Scanning Tunneling ◽  
Platinum Black ◽  
Highly Oriented Pyrolytic Graphite ◽  
Tunneling Microscopy ◽  
Scanning Electron

The use of Scanning Tunneling Microscopy in combination with Scanning Electron Microscopy in the fabrication and imaging of microstructures

1990 ◽  
Vol 48 (4) ◽  
pp. 752-753
Author(s):  
J.M. Gómez-Rodríguez ◽  
Baró A.M.
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Microscope ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Simultaneous Operation ◽  
Tunneling Microscopy ◽  
Versatile Technique ◽  
Scanning Range ◽  
Scanning Electron

In the last few years, Scanning Tunneling Microscopy (STM), has proven to be a powerful and versatile technique to investigate the topographic and electronic structure of metals and semiconductors with an unprecedent vertical (0.01 nm) and lateral (0.2 nm) resolution. In this paper we are interested in the use of STM to study surfaces having microfabricated structures in the nanometer range, particularly those produced by the STM tip itself.In order to study these samples we have used an STM integrated into a commercial Scanning Electron Microscope (SEM). This allows to address two problems which limit the operation of STM: (i) the limited STM scanning range (1-10 μm) which makes difficult the localization of microstructures on the sample; (ii) the undetermined size and shape of the STM probing tip.Our STM/SEM combination has been described in detail earlier. In short, it consists of an STM placed on the sample stage of a commercial SEM allowing the simultaneous operation of both microscopes.

Scanning Tunneling Microscopy of Nanoindentations

1991 ◽  
Vol 239 ◽  
Author(s):  
Martin R. Castell ◽  
Timothy P. Weihs
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Pile Up ◽  
Low Load ◽  
Contour Plots ◽  
Stm Images ◽  
Scanning Electron

ABSTRACTA scanning tunneling microscopy (STM) study of low load indentations into Si, GaAs and Au is presented. Compared with standard micrographs obtained through optical microscopy and scanning electron microscopy, the STM images show greatly improved resolution in and around the indentation. The effects of relaxation and pile-up may be observed through contour plots which show inward bowing of the indentation faces in Si.

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