Scanning Tunneling Microscopy of Nanoindentations
ABSTRACTA scanning tunneling microscopy (STM) study of low load indentations into Si, GaAs and Au is presented. Compared with standard micrographs obtained through optical microscopy and scanning electron microscopy, the STM images show greatly improved resolution in and around the indentation. The effects of relaxation and pile-up may be observed through contour plots which show inward bowing of the indentation faces in Si.
1990 ◽
Vol 48
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pp. 752-753
1994 ◽
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1988 ◽
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1991 ◽
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pp. 618
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1997 ◽
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1992 ◽
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pp. 2400-2403
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