Valence-band structure and optical absorption inp-type GaAs–Al0.3Ga0.7As multi-quantum-well infrared photodetectors under an electric field

1998 ◽  
Vol 23 (5) ◽  
pp. 1037-1046 ◽  
Author(s):  
R. Melliti ◽  
P. Tronc ◽  
E. Mao ◽  
A. Majerfeld ◽  
J. Depeyrot
Keyword(s):  
Optical Absorption ◽  
Band Structure ◽  
Electric Field ◽  
Quantum Well ◽  
Valence Band ◽  
Infrared Photodetectors ◽  
Valence Band Structure ◽  
Quantum Well Infrared Photodetectors ◽  
Multi Quantum Well

FINITE ELEMENT ANALYSIS OF VALENCE BAND STRUCTURE OF SQUARE QUANTUM WELL UNDER THE ELECTRIC FIELD

2009 ◽  
Vol 16 (05) ◽  
pp. 689-696
Author(s):  
M. GUNES ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
K. AKGUNGOR ◽  
I. SÖKMEN
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Band Structure ◽  
Electric Field ◽  
Quantum Well ◽  
Valence Band ◽  
Spin Orbit ◽  
Element Analysis ◽  
Valence Band Structure ◽  
Theory Formula

Valence band structure with spin–orbit (SO) coupling of GaAs/Ga 1-x Al x As square quantum well (SQW) under the electric field by a calculation procedure based on a finite element method (FEM) is investigated using the multiband effective mass theory ([Formula: see text] method). The validity of the method is confirmed with the results of D. Ahn, S. L. Chuang and Y. C. Chang (J. Appl. Phys.64 (1998) 4056), who calculated valence band structure, using axial approximation for Luttinger–Kohn Hamiltonian and finite difference method. Our results demonstrated that SO coupling and electric field have significant effects on the valence band structure.

scholarly journals Photocurrent noise in multi-quantum-well infrared photodetectors

2003 ◽  
Vol 82 (24) ◽  
pp. 4292-4294 ◽  
Author(s):  
A. Carbone ◽  
R. Introzzi ◽  
H. C. Liu
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Multi Quantum Well

High-detectivity 8~12-μm GaAs multi-quantum-well infrared photodetectors

1993 ◽  
Author(s):  
Zhenghao Chen ◽  
Junming Zhou ◽  
Defu Cai ◽  
Qiang Hu ◽  
Huibin Lu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Multi Quantum Well

The Effect of Tensile Strain on AlGaAs/GaAsP Interdiffused Quantum Well Laser

1997 ◽  
Vol 484 ◽  
Author(s):  
K. S. Chan ◽  
Michael C. Y. Chan
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Valence Band ◽  
Tensile Strain ◽  
Optical Gain ◽  
Valence Band Structure ◽  
Quantum Well Laser ◽  
Tensile Strains

AbstractIn this paper, we study the interdiffusion of tensile strained GaAsyPi.y /A10 33Ga0 67As single QW structures with a well width of 60Å. Different P concentrations in the as-grown well are chosen to obtain different tensile strains in the QW. Interdiffusion induces changes in the tensile strains and confinement potentials, which consequently change the valence band structure and the optical gain.

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