Organic semiconductors, comparative tables comparative table on solid state photoelectron spectra

2005 ◽  
pp. 1-15
Author(s):  
Keyword(s):  
Solid State ◽  
Organic Semiconductors ◽  
Photoelectron Spectra

scholarly journals Mesomorphic Behavior in Silver(I) N-(4-Pyridyl) Benzamide with Aromatic π–π Stacking Counterions

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1666 ◽  
Author(s):  
Issac Torres ◽  
Mauro Ruiz ◽  
Hung Phan ◽  
Noemi Dominguez ◽  
Jacobo Garcia ◽  
...  
Keyword(s):  
Solid State ◽  
Organic Semiconductors ◽  
Flexible Electronics ◽  
Crystalline Solid ◽  
Naval Research ◽  
Scanning Calorimetry ◽  
New Family ◽  
Π Stacking ◽  
Capable Groups ◽  
New Generation

Organic semiconductor materials composed of π–π stacking aromatic compounds have been under intense investigation for their potential uses in flexible electronics and other advanced technologies. Herein we report a new family of seven π–π stacking compounds of silver(I) bis-N-(4-pyridyl) benzamide with varying counterions, namely [Ag(NPBA)2]X, where NPBA is N-(4-pyridyl) benzamine, X = NO3− (1), ClO4− (2), CF3SO3− (3), PF6− (4), BF4− (5), CH3PhSO3− (6), and PhSO3− (7), which form extended π−π stacking networks in one-dimensional (1D), 2D and 3D directions in the crystalline solid-state via the phenyl moiety, with average inter-ring distances of 3.823 Å. Interestingly, the counterions that contain π–π stacking-capable groups, such as in 6 and 7, can induce the formation of mesomorphic phases at 130 °C in dimethylformamide (DMF), and can generate highly branched networks at the mesoscale. Atomic force microscopy studies showed that 2D interconnected fibers form right after nucleation, and they extend from ~30 nm in diameter grow to reach the micron scale, which suggests that it may be possible to stop the process in order to obtain nanofibers. Differential scanning calorimetry studies showed no remarkable thermal behavior in the complexes in the solid state, which suggests that the mesomorphic phases originate from the mechanisms that occur in the DMF solution at high temperatures. An all-electron level simulation of the band gaps using NRLMOL (Naval Research Laboratory Molecular Research Library) on the crystals gave 3.25 eV for (1), 3.68 eV for (2), 1.48 eV for (3), 5.08 eV for (4), 1.53 eV for (5), and 3.55 eV for (6). Mesomorphic behavior in materials containing π–π stacking aromatic interactions that also exhibit low-band gap properties may pave the way to a new generation of highly branched organic semiconductors.

Photoelectron spectra and electronic structure of cyanoguanidine in the gas phase and solid state

1981 ◽  
Vol 77 (4) ◽  
pp. 683 ◽  
Author(s):  
David Briggs ◽  
Martyn F. Guest ◽  
Ian H. Hillier ◽  
Michael J. Knight ◽  
Alastair A. MacDowell
Keyword(s):  
Electronic Structure ◽  
Solid State ◽  
Gas Phase ◽  
Photoelectron Spectra

scholarly journals Structural insights into Lewis acid and F4TCNQ doped conjugated polymers by solid-state magnetic resonance spectroscopy

2022 ◽  
Author(s):  
Alana Dixon ◽  
Herve Vezin ◽  
Thuc-Quyen Nguyen ◽  
G. N. Manjunatha Reddy
Keyword(s):  
Solid State ◽  
Magnetic Resonance ◽  
Conjugated Polymers ◽  
Organic Semiconductors ◽  
Carrier Mobility ◽  
Molecular Level ◽  
Charge Carrier Mobility ◽  
Resonance Spectroscopy ◽  
Molecular Doping ◽  
Structural Insights

Molecular doping strategies facilitate orders of magnitudes enhancements in the charge carrier mobility of organic semiconductors (OSCs). Understanding the mechanisms of different doping strategies for OSCs and molecular-level constraints on...

Solid-State Crystallization Behavior of Tetrabenzoporphyrin Organic Semiconductors

2011 ◽  
Vol 44 (2) ◽  
pp. 98-104
Author(s):  
Naoki Noguchi ◽  
Haruki Asatani ◽  
Masakuni Matsuoka
Keyword(s):  
Solid State ◽  
Organic Semiconductors ◽  
Crystallization Behavior

Synthesis of Ferromagnetic Germanides in 40Ge/60Mn Films: Magnetic and Structural Properties

2014 ◽  
Vol 215 ◽  
pp. 167-172
Author(s):  
Victor G. Myagkov ◽  
A.A. Matsunin ◽  
Y.L. Mikhlin ◽  
Victor S. Zhigalov ◽  
Liudmila E. Bykova ◽  
...  
Keyword(s):  
Solid State ◽  
Curie Temperature ◽  
Photoelectron Spectroscopy ◽  
Magnetic Measurements ◽  
Atomic Ratio ◽  
Photoelectron Spectra ◽  
Solid State Reactions ◽  
Ferromagnetic Phase ◽  
X Ray Diffraction ◽  
X Ray

Solid-state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy and magnetic measurements. The films have a nominal atomic ratio Ge:Mn = 40:60 and are investigated at temperatures from 50 to 500 °С. It is established that after annealing at ~120 °С, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 40Ge/60Mn interface. Increasing the annealing temperature to 500 °С leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 360 K and magnetization MS ~ 140-200 emu/cc at room temperature. Analysis of X-ray diffraction patterns and the photoelectron spectra suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3СxOy. The initiation temperature (~120 °С) of the Mn5Ge3 phase is the same both for solid-state reactions in Ge/Mn films, as well as for phase separation in GexMn1-x diluted semiconductors. We conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn1-x diluted semiconductors.

Sign in / Sign up

Export Citation Format

Share Document