Plasma Chemistry and Plasma Processing

2013 ◽  
Keyword(s):  
Plasma Chemistry ◽  
Plasma Processing

Preface

2006 ◽  
Vol 78 (6) ◽  
pp. iv
Author(s):  
Javad Mostaghimi
Keyword(s):  
High Pressure ◽  
International Symposium ◽  
Plasma Chemistry ◽  
Plasma Processing ◽  
International Union ◽  
Applied Chemistry ◽  
Great Progress ◽  
Science Community ◽  
High Level ◽  
Short Courses

The 17th International Symposium on Plasma Chemistry (ISPC 17) was held in Toronto, Ontario, Canada from 7-12 August 2005. ISPC 17 is sponsored by the International Union of Pure and Applied Chemistry (IUPAC) and the International Plasma Chemistry Society (IPCS). This is the second time that the ISPC was held in Canada (ISPC 6, Montreal, Quebec, 1983). Two short courses with 60 participants in low- and high-pressure plasma processing were offered prior to the start of the symposium (4-6 August 2005). A one-day industrial workshop with 63 participants was also held on 7 August 2005.ISPC is the main symposium on partially ionized gases and plasma processing science. During ISPC 17, 560 researchers, including 183 students, from 48 countries presented their latest discoveries in this field. 540 contributed papers, 5 plenary and 18 invited abstracts covering 15 topics in plasma processing science were presented during the symposium. All submitted abstracts were reviewed by the International Organizing Committee. The complete text of the papers was provided on a searchable CD. The high number of contributed papers and the high level of registration in both the industrial workshop as well as the short courses reflect the continued support and interest of researchers in plasma processing science community in this bi-annual event.The invited plenary and topical lectures, selected by the International Organizing Committee, are representative of the great progress in the different areas of plasma chemistry. This issue of Pure and Applied Chemistry offers an overview on the recent advances in high- and low-pressure plasmas as well as on more specific developments in plasma processing science. These topics were presented at the ISPC 17 by plenary and topical invited speakers.Javad MostaghimiConference Chair

Cold Plasma Processing and Plasma Chemistry of Metallic Cobalt Surface

2008 ◽  
Vol 28 (5) ◽  
pp. 617-628 ◽  
Author(s):  
Sang Hwan Jeon ◽  
Yong Soo Kim ◽  
Chong Hun Jung
Keyword(s):  
Cold Plasma ◽  
Plasma Chemistry ◽  
Plasma Processing ◽  
Metallic Cobalt

Microstructural characterization of plasma-processed Ti-Al metal matrix composites

1989 ◽  
Vol 47 ◽  
pp. 552-553
Author(s):  
M. G. Burke ◽  
M. N. Gungor ◽  
M. A. Burke
Keyword(s):  
High Temperature ◽  
Titanium Aluminide ◽  
Plasma Processing ◽  
Microstructural Characterization ◽  
High Temperature Strength ◽  
Matrix Composites ◽  
Intermetallic Matrix ◽  
Long Time ◽  
Strength And Stiffness ◽  
Intermetallic Matrix Composites

Intermetallic matrix composites are candidates for ultrahigh temperature service when light weight and high temperature strength and stiffness are required. Recent efforts to produce intermetallic matrix composites have focused on the titanium aluminide (TiAl) system with various ceramic reinforcements. In order to optimize the composition and processing of these composites it is necessary to evaluate the range of structures that can be produced in these materials and to identify the characteristics of the optimum structures. Normally, TiAl materials are difficult to process and, thus, examination of a suitable range of structures would not be feasible. However, plasma processing offers a novel method for producing composites from difficult to process component materials. By melting one or more of the component materials in a plasma and controlling deposition onto a cooled substrate, a range of structures can be produced and the method is highly suited to examining experimental composite systems. Moreover, because plasma processing involves rapid melting and very rapid cooling can be induced in the deposited composite, it is expected that processing method can avoid some of the problems, such as interfacial degradation, that are associated with the relatively long time, high temperature exposures that are induced by conventional processing methods.

Ultrathin Insulator Films with Atomically Smooth Surfaces Using Plasma Processing

2008 ◽  
Author(s):  
Venkateswara Bommisetty ◽  
Rojan L. Karmacharya ◽  
Suravi Shrestha ◽  
David Galipeau
Keyword(s):  
Plasma Processing ◽  
Smooth Surfaces

Material Structure of Microcrystalline Silicon Deposited with an Expanding Thermal Plasma

2003 ◽  
Vol 762 ◽  
Author(s):  
C. Smit ◽  
D.L. Williamson ◽  
M.C.M. van de Sanden ◽  
R.A.C.M.M. van Swaaij
Keyword(s):  
Thermal Plasma ◽  
Hydrogen Plasma ◽  
Plasma Chemistry ◽  
Plasma Source ◽  
Growth Direction ◽  
Interaction Time ◽  
Material Structure ◽  
Average Particle ◽  
Microcrystalline Silicon ◽  
X Ray

AbstractExpanding thermal plasma CVD (ETP CVD) has been used to deposit thin microcrystalline silicon films. In this study we varied the position at which the silane is injected in the expanding hydrogen plasma: relatively far from the substrate and close to the plasma source, giving a long interaction time of the plasma with the silane, and close to the substrate, resulting in a short interaction time. The material structure is studied extensively. The crystalline fractions as obtained from Raman spectroscopy as well as from X-ray diffraction (XRD) vary from 0 to 67%. The average particle sizes vary from 6 to 17 nm as estimated from the (111) XRD peak using the Scherrer formula. Small angle X-ray scattering (SAXS) and flotation density measurements indicate void volume fractions of about 4 to 6%. When the samples are tilted the SAXS signal is lower than for the untilted case, indicating elongated objects parallel to the growth direction in the films. We show that the material properties are influenced by the position of silane injection in the reactor, indicating a change in the plasma chemistry.

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