Interaction of Non-Equilibrium, Ballistic Phonons in a Keat Pulse with the Electron-Hole Liquid in Ge: The Phonon Wind

1980 ◽  
pp. 395-400 ◽  
Author(s):  
J. C. Hensel ◽  
R. C. Dynes
Keyword(s):  
Electron Hole ◽  
Ballistic Phonons ◽  
Non Equilibrium

BULK NON-EQUILIBRIUM SUPERCONDUCTOR PROBED BY BALLISTIC PHONONS

1978 ◽  
Vol 39 (C6) ◽  
pp. C6-541-C6-542
Author(s):  
B. Pannetier ◽  
J. P. Maneval
Keyword(s):  
Ballistic Phonons ◽  
Non Equilibrium

Dynamical properties of the non-equilibrium electron-hole plasma in silicon

1981 ◽  
Vol 24-25 ◽  
pp. 565-568 ◽  
Author(s):  
A. Forchel ◽  
B. Laurich ◽  
W. Schmid ◽  
G. Maier ◽  
G. Mahler
Keyword(s):  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Dynamical Properties ◽  
Non Equilibrium

Electron—hole liquid in CdS crystals as revealed by non-equilibrium transmission spectroscopy

1977 ◽  
Vol 21 (2) ◽  
pp. 217-219 ◽  
Author(s):  
G.O. Müller ◽  
H.H. Weber ◽  
V.G. Lysenko ◽  
V.I. Revenko ◽  
V.B. Timofeev
Keyword(s):  
Electron Hole ◽  
Transmission Spectroscopy ◽  
Non Equilibrium

MODELING AND SIMULATION OF NONLINEAR ELECTRON-HOLE PLASMA IN DEEP SUBMICRON N-MOSFET DEVICES

1999 ◽  
Vol 08 (02) ◽  
pp. 289-304
Author(s):  
K. RAJENDRAN ◽  
S. SAMUDRA GANESH
Keyword(s):  
Impact Ionization ◽  
Chaotic Behavior ◽  
Collision Frequency ◽  
Deep Submicron ◽  
Chaotic Regime ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Submicron Devices ◽  
Non Equilibrium

Computer simulations were done extensively in order to study nonlinear dynamics of laser and non-equilibrium electron-hole plasma interaction in deep submicron n-MOSFET silicon devices. We constructed the modified Duffing kind of nonlinear electron-hole plasma oscillator equation. Nonlinear characteristics of electron-hole plasma by impact ionization in submicron devices manifest a wide diversity of complex chaotic behavior. Collision frequency is found to be the dominant parameter to influence the bifurcation, chaos, hysteresis and bistable effects of electron-hole plasma at deep submicron devices. Small windows of higher period cascade above the critical value of laser parameter (α1α2) in the chaos region are observed. Non-equilibrium electron-hole plasma shows much chaotic regime at lower value of laser frequency (δ). Hysteresis and bistable region of electron-hole plasma are also presented and the conditions for their occurrence are identified. The unstable region completely merge at higher value of effective collision frequency (γ).

INVESTIGATION OF NON-EQUILIBRIUM ELECTRON-HOLE PLASMA IN NANOWIRES BY THz SPECTROSCOPY

2016 ◽  
Vol 120 (5) ◽  
pp. 796-801
Author(s):  
G. E. Cirlin ◽  
A. C. Buyskih ◽  
A. D. Bouravlev ◽  
Yu. B. Samsonenko ◽  
M. A. Kaliteevski ◽  
...  
Keyword(s):  
Thz Spectroscopy ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Non Equilibrium

scholarly journals Relativistic Doppler reflection as a probe for the initial relaxation of a non-equilibrium electron-hole plasma in silicon

2015 ◽  
Vol 647 ◽  
pp. 012016 ◽  
Author(s):  
Mark D Thomson ◽  
Fanqi Meng ◽  
Bo E Sernelius ◽  
Hartmut G Roskos
Keyword(s):  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Non Equilibrium

scholarly journals Biexcitons fine structure and non-equilibrium effects in transition metal dichalcogenides monolayers from first principles

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Abderrezak Torche ◽  
Gabriel Bester
Keyword(s):  
Fine Structure ◽  
Transition Metal ◽  
Exchange Interaction ◽  
First Principles ◽  
Transition Metal Dichalcogenides ◽  
Exciton State ◽  
Two Dimensions ◽  
Electron Hole ◽  
Metal Dichalcogenides ◽  
Non Equilibrium

AbstractTransition metal dichalcogenides monolayers host strongly bounded Coulomb complexes such as exciton and trion due to charge confinement and screening reduction in two dimensions. Biexciton, a bound state of two electrons and two holes, has also been observed in these materials with a binding energy which is one order of magnitude larger than its counterpart in conventional semiconductors. Here, using first principles methods, we address the biexciton in WSe2 monolayer and unravel the important role of the electron-hole exchange interaction in dictating the valley character of biexciton states and their fine structure. In particular, the fundamental biexciton transition which is located between the exciton and trion peaks is shown to have a fine structure of 2.8 meV mainly due to the splitting of the dark exciton state under the intervalley electron-hole exchange interaction. Non equilibrium effects are also addressed and optical fingerprints of non-thermalized biexciton population are discussed.

scholarly journals Non-equilibrium Properties of a Pumped-Decaying Bose-Condensed Electron–Hole Gas in the BCS–BEC Crossover Region

2016 ◽  
Vol 183 (3-4) ◽  
pp. 127-135 ◽  
Author(s):  
R. Hanai ◽  
P. B. Littlewood ◽  
Y. Ohashi
Keyword(s):  
Crossover Region ◽  
Electron Hole ◽  
Non Equilibrium
Sign in / Sign up

Export Citation Format

Share Document