Electron Mobility and Localization in High-Density Helium Gas in an Extended Temperature Range

1998 ◽  
pp. 79-84
Author(s):  
A. F. Borghesani ◽  
M. Santini
1998 ◽  
pp. 91-96
Author(s):  
A. F. Borghesani ◽  
M. Santini

1992 ◽  
Vol 46 (12) ◽  
pp. 7902-7909 ◽  
Author(s):  
A. F. Borghesani ◽  
M. Santini ◽  
P. Lamp

1967 ◽  
Vol 148 ◽  
pp. 301 ◽  
Author(s):  
D. D. Clayton ◽  
P. B. Shaw
Keyword(s):  

1977 ◽  
Vol 19 (81) ◽  
pp. 679-679
Author(s):  
T. Nakamura ◽  
H. Nakamura ◽  
M. Higashiura ◽  
O. Abe

AbstractTensile fracture strengths of fine-grained compressed high-density snow, of compressed and metamorphosed high-density snow-ice, of fine-grained naturally settled snow, and of snow-ice artificially made from the settled snow by freezing with absorbed water, were obtained at constant deformation speeds (constant strain-rates) in a temperature range of 264 to 270K. No remarkable temperature dependence of fracture stresses was observed in this temperature range. A critical deformation speed in a tensile test above which all the snow samples, except settled snow, fractured, was 4.2 × 10–7 m s–1. The fracture strength ρ (in N m–2) varied with snow density ρ (kg m–3) as σ = 2.5 × 104 × 1.004 6ρ. In a power-law relationship between strain-rate and maximum stress, ∝ σn, the constant n obtained was 5.3 for all the unfractured snow samples.


2018 ◽  
Vol 2 (5) ◽  
pp. 1057-1068 ◽  
Author(s):  
Man Vir Singh ◽  
Sudesh Kumar ◽  
Moinuddin Sarker

Waste high-density poly(ethylene) (HD-PE) plastic deformation into liquid hydrocarbon fuel using a pyrolysis-catalytic cracking process with a copper carbonate (CuCO3) catalyst, at a temperature range from 23 °C to 390 °C.


1996 ◽  
Vol 440 ◽  
Author(s):  
Kazuki Mizushima ◽  
Pavel Šmilauer ◽  
Dimitri D. Vvedensky

AbstractKinetic Monte Carlo simulations with two species (Si and H) have been performed to identify the mechanism behind the H-induced creation of a strongly temperature-dependent high density of Si islands in the temperature range of 300–550 K during molecular-beam epitaxy on Si(001) surface. A model is proposed to explain this effect as a result of an activated exchange between H and Si at Si island edges.


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