Electronic Properties of Composite Materials

1972 ◽  
Author(s):  
Maurice A. Leeds
Keyword(s):  
Composite Materials ◽  
Electronic Properties

scholarly journals MODELING THE ELECTRONIC CHARACTERISTICS OF ELECTRICAL CERAMICS. PART. II

2021 ◽  
pp. 66-74
Author(s):  
V.V. Eremina ◽  
◽  
O.V. Zhilindina ◽  
E.A. Podolko ◽  
◽  
...  
Keyword(s):  
Mathematical Modeling ◽  
Composite Materials ◽  
Electronic Properties ◽  
Electronic Polarization ◽  
Frequency Spectra ◽  
Operational Frequency

The efficiency of mathematical modeling of the operational frequency spectra of composite materials caused by the processes of elastic electronic polarization is examined. The second part of the paper presents the results of modeling the electronic properties of pure oxides.

The interactions between TiO2 and graphene with surface inhomogeneity determined using density functional theory

2015 ◽  
Vol 17 (44) ◽  
pp. 29734-29746 ◽  
Author(s):  
Brandon Bukowski ◽  
N. Aaron Deskins
Keyword(s):  
Density Functional Theory ◽  
Composite Materials ◽  
Electronic Properties ◽  
Density Functional ◽  
Surface Defects ◽  
Functional Theory ◽  
Surface Inhomogeneity

TiO2/graphene composites have shown promise as photocatalysts, leading to improved electronic properties. Surface defects in graphene were modeled to understand their role in these composite materials.

scholarly journals MODELING THE ELECTRONIC CHARACTERISTICS OF ELECTRICAL CERAMICS. PART III

2021 ◽  
pp. 67-74
Author(s):  
V.V. Eremina ◽  
◽  
O.V. Zhilindina ◽  
E.A. Podolko ◽  
◽  
...  
Keyword(s):  
Mathematical Modeling ◽  
Composite Materials ◽  
Electronic Properties ◽  
Electronic Polarization ◽  
Frequency Spectra ◽  
Operational Frequency

The efficiency of mathematical modeling of composite materials operational frequency spectra, caused by the processes of elastic electronic polarization is examined. The results of modeling the electronic properties of pure oxides are presented in the second part of the paper.

Synthesis and Electronic Properties of Thermoelectric and Magnetic Nanoparticle Composite Materials

2011 ◽  
Vol 40 (5) ◽  
pp. 1078-1082 ◽  
Author(s):  
Mikio Koyano ◽  
Daichi Kito ◽  
Kengo Sakai ◽  
Tomoki Ariga
Keyword(s):  
Composite Materials ◽  
Electronic Properties ◽  
Magnetic Nanoparticle

Comparative Microstructures of Ion Milled and Electrochemically Thinned Composite Materials

1974 ◽  
Vol 32 ◽  
pp. 546-547
Author(s):  
R.R. Russell
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Composite Materials ◽  
Great Difficulty ◽  
Ion Milling ◽  
Transmission Electron ◽  
Ion Damage ◽  
Intermetallic Composite

Transmission electron microscopy of metallic/intermetallic composite materials is most challenging since the microscopist typically has great difficulty preparing specimens with uniform electron thin areas in adjacent phases. The application of ion milling for thinning foils from such materials has been quite effective. Although composite specimens prepared by ion milling have yielded much microstructural information, this technique has some inherent drawbacks such as the possible generation of ion damage near sample surfaces.

Transmission electron microscopy of composite materials

1988 ◽  
Vol 46 ◽  
pp. 1012-1015
Author(s):  
K.P.D. Lagerlof
Keyword(s):  
Composite Materials ◽  
Physical Properties ◽  
Structural Defects ◽  
Structural Composites ◽  
Multiphase Materials ◽  
Structural Reinforcement ◽  
Transmission Electron ◽  
Reinforced Fiber ◽  
Particulate Reinforced Composites ◽  
Definition Of

Although most materials contain more than one phase, and thus are multiphase materials, the definition of composite materials is commonly used to describe those materials containing more than one phase deliberately added to obtain certain desired physical properties. Composite materials are often classified according to their application, i.e. structural composites and electronic composites, but may also be classified according to the type of compounds making up the composite, i.e. metal/ceramic, ceramic/ceramie and metal/semiconductor composites. For structural composites it is also common to refer to the type of structural reinforcement; whisker-reinforced, fiber-reinforced, or particulate reinforced composites [1-4].For all types of composite materials, it is of fundamental importance to understand the relationship between the microstructure and the observed physical properties, and it is therefore vital to properly characterize the microstructure. The interfaces separating the different phases comprising the composite are of particular interest to understand. In structural composites the interface is often the weakest part, where fracture will nucleate, and in electronic composites structural defects at or near the interface will affect the critical electronic properties.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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