Electrical Conductivity, Thermal Conductivity, Thermoelectric Power, Hall Coefficient, and Nernst Coefficient of Amorphous Substances Exhibiting Electronic Conduction [1]

1965 ◽  
pp. 179-193
Author(s):  
Aleksandr Ivanovich Gubanov
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Electronic Conduction ◽  
Amorphous Substances

Wärmeleitfähigkeit, elektrische Leitfähigkeit, Hall-Effekt, Thermospannung und spezifische Wärme von Ag2Se

1962 ◽  
Vol 17 (10) ◽  
pp. 886-889 ◽  
Author(s):  
Y. Baer ◽  
G. Busch ◽  
C. Fröhlich ◽  
E. Steigmeier
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Specific Heat ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
A Value ◽  
Price Formula ◽  
Elektrische Leitfähigkeit ◽  
Increasing Temperature

The thermal conductivity, electrical conductivity. Hall coefficient und thermoelectric power of Ag2Se have been measured between 80 and 600°K. In the low temperature semiconductor phase the thermal conductivity increases with increasing temperature due to the high amount of carrier contribution. The latter has been calculated using the Price formula. Agreement with experiment is satisfactory. The specific heat has been measured between 30 and 200°C. For the latent heat a value of (5.7 ± 0.5) cal/gr was determined in agreement with measurements of Bellati and Lussana 4. In addition to the transition at 133 °C an unknown new transition has been found at about 90 °C.

scholarly journals Thermophysical properties of some liquid binary Mg-based alloys

2017 ◽  
Vol 53 (3) ◽  
pp. 279-284
Author(s):  
Y. Plevachuk ◽  
V. Sklyarchuk ◽  
G. Pottlacher ◽  
A. Yakymovych ◽  
O. Tkach
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Thermoelectric Power ◽  
Thermophysical Properties ◽  
Point Contact ◽  
Calculated Data ◽  
Contact Method ◽  
Concentric Cylinder ◽  
Cast Alloys ◽  
Cylinder Method

In this study, some structure-sensitive thermophysical properties, namely, electrical conductivity, thermal conductivity and thermoelectric power of liquid binary alloys Al33.3Mg66.7, Mg47.6Zn52.4 and Mg33.3Zn66.7 (all in wt.%), as the most promising cast alloys to fabricate components for cars, aircraft and other complex engineering products, were investigated. The electrical conductivity and thermoelectric power were measured in a wide temperature range by the four-point contact method. The thermal conductivity was measured by the steady-state concentric cylinder method. The obtained results are compared with literature experimental and calculated data.

ELECTRICAL RESISTIVITY, HALL COEFFICIENT, AND THERMOELECTRIC POWER OF AuSb2 AND Cu2Sb

1964 ◽  
Vol 42 (3) ◽  
pp. 519-525 ◽  
Author(s):  
W. B. Pearson
Keyword(s):  
Electrical Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Low Temperatures ◽  
Room Temperature ◽  
Iron Impurity

The electrical conductivity and absolute thermoelectric power of AuSb2 and Cu2Sb have been measured between 2.5° and 300 °K. Room-temperature Hall coefficients were also determined. Iron impurity causes a giant diffusion thermoelectric power at low temperatures in the compound Cu2Sb, as it has previously been found to do in Cu, Ag, and Au.

Ruthenium Doped Gadolinium Titanate: Effects of a Variable Valent Acceptor on Ionic and Electronic Conduction

1992 ◽  
Vol 293 ◽  
Author(s):  
M.A. Spears ◽  
H.L. Tuller
Keyword(s):  
Electrical Conductivity ◽  
Thermoelectric Power ◽  
Defect Structure ◽  
Oxygen Vacancies ◽  
Ionic Conduction ◽  
Electronic Conductivity ◽  
Electronic Conduction ◽  
Defect Band ◽  
Electron Migration

AbstractWe have investigated ruthenium doped gadolinium titanate, Gd2(RuxTi1-x)2O7-δ with 0 ≤ x ≤ 0.2, to determine the role of variable valent Ru in influencing the defect structure and transport properties of the pyrochlore host. We have developed a defect chemical model to interpret electrical conductivity, thermoelectric power, and thermogravimetry data. We have found that Ru acts as an acceptor compensated in large part by oxygen vacancies, resulting in enhanced ionic conduction at low values of x. For larger values (x ≈ 0.05), electronic conductivity predominates which we attribute to electron migration by hopping through a Ru-derived defect band.

On The Thermoelectric Power And Transport Properties Of Quasicrystals

1998 ◽  
Vol 553 ◽  
Author(s):  
F. Cyrot-Lackmann
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Fermi Surface ◽  
Physical Properties ◽  
Thermoelectric Power ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Phonon Drag ◽  
Crude Estimate

Stable quasicrystals exhibit specific and unusual physical properties, such as, diamagnetism, low electrical conductivity, low thermal conductivity, and large themoelectric power at room temperature. These properties can be understood with a Bragg's reflexions scheme due to their dense filled reciprocal space.This leads to small gaps on the Fermi surface (some tenths of eV), much narrower than the usual Hume-Rothery ones (of order of 0.5 eV) which explain their stability. These gaps lead to the existence of quasi Umklapp processes, crucial for the interpretation of thermoelectric power. In some cases, the positive phonon drag contribution due to Umklapp processes, add with the electronic one's and dominates at room temperature with a large positive thermoelectric power. A crude estimate of the figure of merit gives some hope for applications of some quasicrystals and high approximants as new thermoelectric materials.

Electrical properties of InAsxSb1−x alloys

1968 ◽  
Vol 46 (10) ◽  
pp. 1207-1214 ◽  
Author(s):  
William M. Coderre ◽  
John C. Woolley
Keyword(s):  
Electrical Conductivity ◽  
High Temperature ◽  
Electrical Properties ◽  
Optical Absorption ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Conductivity Data ◽  
Absorption Data ◽  
Alloy Scattering ◽  
Electrical Conductivity Data

Measurements have been made of the high-temperature Hall coefficient, electrical conductivity, and thermoelectric power in polycrystalline n-type samples of InAsxSb1−x alloys of extrinsic carrier concentration ~1017/cm3. From the Hall-coefficient data, values of the extrapolated absolute-zero band gap E00 have been determined over the whole alloy range, the thermoelectric power results being used to provide a correction factor to allow for effects of degeneracy. In all cases this correction was found to be very small. The resultant values of E00 for the alloys are somewhat lower than those obtained previously from optical absorption data and show a minimum of 0.17 eV at x ~0.4. From the electrical conductivity data, values of electron mobility μc have been obtained as a function of temperature T and composition x. At all temperatures in the range 0–500 °C, μc is found to vary linearly with x, indicating that the effects of alloy scattering are negligible. For each value of x, μc is found to satisfy the relation μc = μ0 exp (−T/θ), and the variation of θ with x has been determined.

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