Electronic Properties and Stability of Semiconductor Heterostructures

AbstractActivities in semiconductor heterostructures are reviewed, with focus on the fundamental physics aspects in the quantum regime and with emphasis on recent experimental observations. The GaAs-GaAlAs is used to illustrate the general electronic properties of interest, which are obtained through various measurement techniques. Other heterostructures, including III-V, II(IV)-VI, and IV materials, are covered to the extent that they exhibit new and specific features.

Download Full-text

Artificial Atoms in Magnetic Field: Electronic and Optical Properties

International Journal of Modern Physics B ◽

10.1142/s0217979298000302 ◽

1998 ◽

Vol 12 (05) ◽

pp. 471-502 ◽

Cited By ~ 9

Author(s):

R. Rinaldi

Keyword(s):

Magnetic Field ◽

Optical Properties ◽

Magnetic Fields ◽

Electronic Properties ◽

Semiconductor Heterostructures ◽

High Magnetic Fields ◽

Correlation Effects ◽

Particle Theory ◽

Artificial Atoms ◽

Optical And Electronic Properties

Quantum dots semiconductor heterostructures exhibit optical and electronic properties similar to those of real atoms, due to the delta like dispersion of the density of states. The study of the optical and electronic properties of artificial atoms in high magnetic fields allows the observation of quantum effects typical of the atomic physics. In this work we review the problem of artificial atoms in magnetic fields starting from the single-particle theory up to the problems encountered in the observation of correlation effects when two or more carriers are confined in the dot. The main experiments elucidating the change of the optical and electronic properties of artifical atoms in magnetic fields are also reviewed.

Download Full-text

MECHANICAL AND ELECTRONIC PROPERTIES OF STRAINED LAYER SUPERLATTICES STUDIED BY DENSITY FUNCTIONAL TB AND PATH PROBABILITY METHODS

International Journal of Nanoscience ◽

10.1142/s0219581x02000322 ◽

2002 ◽

Vol 01 (03n04) ◽

pp. 357-371 ◽

Cited By ~ 6

Author(s):

K. MASUDA-JINDO ◽

R. KIKUCHI

Keyword(s):

Electronic Properties ◽

Density Functional ◽

Statistical Physics ◽

Tight Binding ◽

Semiconductor Heterostructures ◽

Probability Method ◽

Misfit Dislocations ◽

Atomic Structures ◽

Probability Methods ◽

Interface Disorder

The atomic and electronic structures of semiconductor heterostructures, including steps, misfit dislocations and interface disorder, are studied by using the density-functional tight-binding (TB) method. Atomic structures of misfit dislocations both edge type 1/2 <110> (001) and 60° dislocations in the semiconductor heterostructures, like Si-Ge superlattices and GaAs/Si, InAs/GaAs(001), InP/GaAs(001) systems, are studied by using order of N [O(N)] calculational method. The path probability method (PPM) in the statistical physics is used to study the influence of the interface disorder on the electronic properties of the semiconductor heterostructures. It is shown that the junction relaxation influences quite significantly the electronic and mechanical properties of semiconductor heterostructures. The critical layer thickness hc for the generation of misfit dislocations depends significantly on the interface disorder (increase of hc) at the semiconductor heterostructures.

Download Full-text

Regulation of Electronic Properties of ZnO/In2O3 Heterospheres via Atomic Layer Deposition for High Performance NO2 Detection

CrystEngComm ◽

10.1039/d1ce00643f ◽

2021 ◽

Author(s):

Zishuo Li ◽

Chengming Lou ◽

Guanglu Lei ◽

Guocai Lu ◽

Hongyin Pan ◽

...

Keyword(s):

Electronic Properties ◽

Gas Sensors ◽

High Performance ◽

Atomic Layer ◽

Semiconductor Heterostructures ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Highly Sensitive ◽

Unique Chemical ◽

No2 Detection

Metal oxide semiconductor heterostructures are promising for gas sensors due to the unique chemical and electronic properties at the heterointerface. In this work, a highly sensitive and selective gas sensor...

Download Full-text