Electronic Properties of Semiconductor Heterostructures in a Magnetic Field

1985 ◽  
pp. 461-497
Author(s):  
L. L. Chang
Keyword(s):  
Magnetic Field ◽  
Electronic Properties ◽  
Semiconductor Heterostructures

Artificial Atoms in Magnetic Field: Electronic and Optical Properties

1998 ◽  
Vol 12 (05) ◽  
pp. 471-502 ◽  
Author(s):  
R. Rinaldi
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Magnetic Fields ◽  
Electronic Properties ◽  
Semiconductor Heterostructures ◽  
High Magnetic Fields ◽  
Correlation Effects ◽  
Particle Theory ◽  
Artificial Atoms ◽  
Optical And Electronic Properties

Quantum dots semiconductor heterostructures exhibit optical and electronic properties similar to those of real atoms, due to the delta like dispersion of the density of states. The study of the optical and electronic properties of artificial atoms in high magnetic fields allows the observation of quantum effects typical of the atomic physics. In this work we review the problem of artificial atoms in magnetic fields starting from the single-particle theory up to the problems encountered in the observation of correlation effects when two or more carriers are confined in the dot. The main experiments elucidating the change of the optical and electronic properties of artifical atoms in magnetic fields are also reviewed.

Magnetic field tuning of interface electronic properties in manganite-titanate junctions

2008 ◽  
Vol 92 (12) ◽  
pp. 122104 ◽  
Author(s):  
J. Matsuno ◽  
A. Sawa ◽  
M. Kawasaki ◽  
Y. Tokura
Keyword(s):  
Magnetic Field ◽  
Electronic Properties

About the Metal-Insulator Transition in Quasicrystals

2000 ◽  
Vol 643 ◽  
Author(s):  
J. Delahaye ◽  
C. Berger ◽  
T. Grenet ◽  
G. Fourcaudot
Keyword(s):  
Magnetic Field ◽  
Fermi Level ◽  
Electronic Properties ◽  
Field Dependence ◽  
Density Of States ◽  
Disordered Systems ◽  
Magnetic Field Dependence ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Mi Transition

AbstractElectronic properties (conductivity and density of states) of quasicrystals present strong similarities with disordered semiconductor based systems on both sides of the Mott-Anderson metal-insulator (MI) transition. We revisit the conductivity of the i-AlCuFe and i-AlPdMn phases, which has temperature and magnetic field dependence characteristic of the metallic side of the transition. The i-AlPdRe ribbon samples can be on either side of the transition depending on their conductivity value. In all these i-phases, the density of states at the Fermi level EF is low. Its energy dependence close to EF is similar to disordered systems close to the MI transition where it is ascribed to effects of interactions between electrons and disorder.

scholarly journals Electronic Properties of Twisted Bilayer Graphene in the Presence of a Magnetic Field

2020 ◽  
Vol 233 ◽  
pp. 03004
Author(s):  
M.F.C. Martins Quintela ◽  
J.C.C. Guerra ◽  
S.M. João
Keyword(s):  
Magnetic Field ◽  
Electronic Properties ◽  
Twist Angle ◽  
Bilayer Graphene ◽  
Polynomial Method ◽  
Zero Energy ◽  
Energy Bands ◽  
Optical And Electronic Properties ◽  
Twisted Bilayer Graphene ◽  
Kernel Polynomial Method

In AA-stacked twisted bilayer graphene, the lower energy bands become completely flat when the twist angle passes through certain specific values: the so-called “magic angles”. The Dirac peak appears at zero energy due to the flattening of these bands when the twist angle is sufficiently small [1-3]. When a constant perpendicular magnetic field is applied, Landau levels start appearing as expected [5]. We used the Kernel Polynomial Method (KPM) [6] as implemented in KITE [7] to study the optical and electronic properties of these systems. The aim of this work is to analyze how the features of these quantities change with the twist angle in the presence of an uniform magnetic field.

Electronic properties of Cs2TCNQ3 crystals grown under magnetic field

2003 ◽  
Vol 133-134 ◽  
pp. 535-537 ◽  
Author(s):  
N. Kuroda ◽  
T. Sugimoto ◽  
M. Hagiwara ◽  
Hasanudin ◽  
K. Ueda ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electronic Properties

Mapping of local electronic properties in nanostructured CMR thin films by Scanning Tunneling Microscopy (STM) and Local Conductance Map (LCMAP)

2004 ◽  
Vol 838 ◽  
Author(s):  
Sohini Kar ◽  
Barnali Ghosh ◽  
L. K. Brar ◽  
M A. Paranjape ◽  
A. K. Raychaudhuri
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Grain Boundaries ◽  
Electronic Properties ◽  
Variable Temperature ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Colossal Magnetoresistive ◽  
Spatially Resolved ◽  
Temperature Scanning

ABSTRACTWe have investigated the local electronic properties and the spatially resolved magnetoresistance of a nanostructured film of a colossal magnetoresistive (CMR) material by local conductance mapping (LCMAP) using a variable temperature Scanning Tunneling Microscope (STM) operating in a magnetic field. The nanostructured thin films (thickness ≈500nm) of the CMR material La0.67Sr0.33MnO3(LSMO) on quartz substrates were prepared using chemical solution deposition (CSD) process. The CSD grown films were imaged by both STM and atomic force microscopy (AFM). Due to the presence of a large number of grain boundaries (GB's), these films show low field magnetoresistance (LFMR) which increases at lower temperatures.The measurement of spatially resolved electronic properties reveal the extent of variation of the density of states (DOS) at and close to the Fermi level (EF) across the grain boundaries and its role in the electrical resistance of the GB. Measurement of the local conductance maps (LCMAP) as a function of magnetic field as well as temperature reveals that the LFMR occurs at the GB. While it was known that LFMR in CMR films originates from the GB, this is the first investigation that maps the local electronic properties at a GB in a magnetic field and traces the origin of LFMR at the GB.

scholarly journals LOCAL ORDER AND MAGNETIC FIELD EFFECTS ON THE ELECTRONIC PROPERTIES OF DISORDERED BINARY ALLOYS IN THE QUANTUM SITE PERCOLATION LIMIT

1999 ◽  
Vol 13 (32) ◽  
pp. 3861-3877
Author(s):  
D. F. DE MELLO ◽  
G. G. CABRERA
Keyword(s):  
Magnetic Field ◽  
Electronic Properties ◽  
Binary Alloys ◽  
Finite Size ◽  
Local Order ◽  
Destructive Interference ◽  
Magnetic Field Effects ◽  
Site Percolation ◽  
Field Effects ◽  
The Magnetic Field

Electronic properties of disordered binary alloys are studied via the calculation of the average Density of States (DOS) in two and three dimensions. We propose a new approximate scheme that allows for the inclusion of local order effects in finite geometries and extrapolates the behavior of infinite systems following finite-size scaling ideas. We particularly investigate the limit of the Quantum Site Percolation regime described by a tight-binding Hamiltonian. This limit was chosen to probe the role of short range order (SRO) properties under extreme conditions. The method is numerically highly efficient and asymptotically exact in important limits, predicting the correct DOS structure as a function of the SRO parameters. Magnetic field effects can also be included in our model to study the interplay of local order and the shifted quantum interference driven by the field. The average DOS is highly sensitive to changes in the SRO properties and striking effects are observed when a magnetic field is applied near the segregated regime. The new effects observed are twofold: there is a reduction of the band width and the formation of a gap in the middle of the band, both as a consequence of destructive interference of electronic paths and the loss of coherence for particular values of the magnetic field. The above phenomena are periodic in the magnetic flux. For other limits that imply strong localization, the magnetic field produces minor changes in the structure of the average DOS.

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