Ion Beam Studies of Metal-Metal and Metal-Semiconductor Reactions

Author(s):  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Sensors ◽  
2021 ◽  
Vol 22 (1) ◽  
pp. 287
Author(s):  
Adam Łaszcz ◽  
Andrzej Czerwinski ◽  
Emilia Pruszyńska-Karbownik ◽  
Marek Wzorek ◽  
Dariusz Szmigiel

The focused ion beam (FIB) technique was used to fabricate a nanothermocouple (with a 90 nm wide nanojunction) based on a metal–semiconductor (Pt–Si) structure, which showed a sensitivity up to 10 times larger (with Seebeck coefficient up to 140 µV/K) than typical metal–metal nanothermocouples. In contrast to the fabrication of nanothermocouples which requires a high-tech semiconductor manufacturing line with sophisticated fabrication techniques, environment, and advanced equipment, FIB systems are available in many research laboratories without the need for a high-tech environment, and the described processing is performed relatively quickly by a single operator. The linear response of the manufactured nanothermocouple enabled sensitive measurements even with small changes of temperature when heated with a stream of hot air. A nonlinear response of the nanothermocouple (up to 83.85 mV) was observed during the exposition to an argon-laser beam with a high optical power density (up to 17.4 Wcm−2), which was also used for the laser annealing of metal–semiconductor interfaces. The analysis of the results implies the application of such nanothermocouples, especially for the characterization of laser beams with nanometer spatial resolution. Improvements of the FIB processing should lead to an even higher Seebeck coefficient of the nanothermocouples; e.g., in case of the availability of other suitable metal sources (e.g., Cr).


1981 ◽  
Vol 182-183 ◽  
pp. 1-13 ◽  
Author(s):  
J.W. Mayer ◽  
B.Y. Tsaur ◽  
S.S. Lau ◽  
L-S. Hung

2003 ◽  
Vol 792 ◽  
Author(s):  
X. Y. Li ◽  
R. F. Zhang ◽  
B. X. Liu

ABSTRACTWe developed a new scheme, namely ion beam manipulation, i.e. interface-assisted ion beam mixing, for fabricating amorphous alloys and artificial solid-state microstructures in metal-metal multilayers, in which the individual layer thickness is down to about 2 nm, differing significantly from the typical thickness of 5–8 nm in conventional ion beam mixing. Employing the scheme, some interesting results were obtained in three highly immiscible systems. In the Ag-W system, which has the largest positive heat of formation among the transition metal alloys, amorphous alloys were obtained, for the first time, through a two-step structural transition, i.e. the initial polycrystalline Ag and W transformed into an intermediate bcc phase, which later transformed into an amorphous state. In the Ru-Pd system, the initial polycrystalline Pd and Ru first transformed into a single crystalline FCC phase, and then turned into a well-ordered structure, which showed an apparent tendency to transform back to the FCC phase upon over-irradiation. In the Ag-Co system, an ordered layered structure was observed and identified to consist of two overlapped FCC lattices, corresponding to a new magnetic state of Co atom with an average magnetic moment measured to be 2.84 μB, which was about twice the equilibrium datum and was the largest value ever observed. We present, in this paper, a brief review concerning the scheme of ion beam manipulation in fabricating the metastable alloys, the structural evolution upon ion irradiation and the associated magnetic properties of some ordered structures obtained by the scheme.


1980 ◽  
Vol 1 ◽  
Author(s):  
S. S. Lau ◽  
Martti Mäenpää ◽  
James W. Mayer

ABSTRACTPulsed beams (laser, electron, or ion) and ion beams (ion beam mixing) have been used to induce structural and compositional changes in metal-metal and metal-semiconductor thin-film structures. Metastable crystalline and amorphous phases have been formed. Although ultra fast quenching occurs with both techniques, metastable phases are formed by quenching from the liquid with pulsed beams and from the solid-phase with ion-induced reactions. With both techniques metastable phases can be formed over a broader compositional range than with conventional melt-quench methods.


1993 ◽  
Vol 316 ◽  
Author(s):  
Sergei M. Duvanov ◽  
Alexander P. Kobzev ◽  
Alexander M. Tolopa

ABSTRACTDepth profiles of elements in the surface layers of metals and metallized dielectrics were investigated by Rutherford Backscatteríng Spectrometry (RBS) (for the depth profiling of heavy elements), resonant elastic Backscattering Spectrometry (BS) of 4He+ and 1H+ (for the light elements depth profiling), Elastic Recoil Detection (ERD) of 1H+ (for depth profiling of hydrogen atoms), SIMS and AES techniques. The technological TAMEK source operated in the regime of ion beam assisted deposition (IBAD) of the metal ions (ion implantation at average beam energy ≤ 150 KeV and simultaneous deposition of the same ions at energy 100 eV) in pulse mode. Coatings were deposited on metal and glass samples at temperature of substrates T=100° C. In this report, we discuss the investigation results of samples modified by IBAD in technical vacuum produced by oil diffusion pumping. Phases like TiO, TiC, TiN, TiH are indicated in interface coating-substrate layers. The total thickness of mutually mixed metal-glass layer was found to be 400 nm and it was equal up to 3 µm for metal-metal layers. Cu/Al thin layers on a glass subsrate may be used as mirrors for powerful lasers with large (up to 5 J/cm2) energy contribution.


1983 ◽  
Vol 27 ◽  
Author(s):  
J. Grilhe ◽  
J.P. Riviere ◽  
J. Delafond ◽  
C. Jaouen ◽  
C. Templier

ABSTRACTA new approach is developed, employing “in situ” electrical resistivity measurements, as a tool to study ion beam mixing of evaporated metal-metal multi or bilayers. The electrical resistivity variations measured continuously during the ion bombardment exhibit a monotonical increase and a tendency toward a saturation process allowing to detect precisely the total mixing of the film. The volume fraction of intermixed atoms can be determined within the framework of a simple conduction model. Experimental results are given in the case of Fe-Al and Al-Ag multilayers.


Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.


Author(s):  
P.G. Pawar ◽  
P. Duhamel ◽  
G.W. Monk

A beam of ions of mass greater than a few atomic mass units and with sufficient energy can remove atoms from the surface of a solid material at a useful rate. A system used to achieve this purpose under controlled atmospheres is called an ion miliing machine. An ion milling apparatus presently available as IMMI-III with a IMMIAC was used in this investigation. Unless otherwise stated, all the micro milling operations were done with Ar+ at 6kv using a beam current of 100 μA for each of the two guns, with a specimen tilt of 15° from the horizontal plane.It is fairly well established that ion bombardment of the surface of homogeneous materials can produce surface topography which resembles geological erosional features.


Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.


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