Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

In-situ Control of Nitrogen Content and the Effect on PL Properties of SiNx Films Grown by Ion Beam Sputter Deposition

2004 ◽  
Vol 817 ◽  
Author(s):  
Kyung Joong Kim ◽  
Dae Won Moon ◽  
Moon-Seung Yang ◽  
Jung H. Shin
Keyword(s):  
Thin Films ◽  
Nitrogen Content ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Visible Luminescence ◽  
Si Nanocrystals ◽  
Nitrogen Ion ◽  
Ion Beam Sputter Deposition

AbstractStrong visible luminescence was observed in silicon nitride (SiNx) thin films grown by ion beam sputter deposition (IBSD) using nitrogen ion as a sputtering source. Nitrogen content (x) of the films was controlled by variation of the sputtering N2 ion flux and analysed by in-situ x-ray photoelectron spectroscopy (XPS). Relative sensitivity factors of Si and N peaks could be calculated by Rutherford backscattering spectroscopy. The photoluminescence (PL) spectra of the post-annealed samples showed visible luminescence at blue-green region. PL energy showed a blue-shift due to quantum confinement with decreased excess Si and intensity showed a maximum value near x = 1.1. These PL properties are well correlated with the formation of Si nanocrystals (nc-Si). We found that there is a great increase of PL energy of SiNx thin films compared with SiOx thin films, which indicate that the surface state of Si nanocrystals plays an important role to increase PL energy and intensity.

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

In-Situ Dual Beam (FIBSEM) Techniques for Probe Pad Deposition and Dielectric Integrity Inspection in 0.2 μm Technology DRAM Single Cells

1999 ◽  
Author(s):  
Gunnar Zimmermann ◽  
Richard Chapman
Keyword(s):  
Electron Beam ◽  
Single Cell ◽  
Single Cells ◽  
Ion Beam ◽  
Gate Oxide ◽  
Ion Milling ◽  
Dual Beam ◽  
Sem Imaging ◽  
Innovative Techniques

Abstract Dual beam FIBSEM systems invite the use of innovative techniques to localize IC fails both electrically and physically. For electrical localization, we present a quick and reliable in-situ FIBSEM technique to deposit probe pads with very low parasitic leakage (Ipara < 4E-11A at 3V). The probe pads were Pt, deposited with ion beam assistance, on top of highly insulating SiOx, deposited with electron beam assistance. The buried plate (n-Band), p-well, wordline and bitline of a failing and a good 0.2 μm technology DRAM single cell were contacted. Both cells shared the same wordline for direct comparison of cell characteristics. Through this technique we electrically isolated the fail to a single cell by detecting leakage between the polysilicon wordline gate and the cell diffusion. For physical localization, we present a completely in-situ FIBSEM technique that combines ion milling, XeF2 staining and SEM imaging. With this technique, the electrically isolated fail was found to be a hole in the gate oxide at the bad cell.

In-situ superconducting YBa2Cu3O7 thin films grown by ion beam co-deposition

1989 ◽  
Vol 43 (1-4) ◽  
pp. 393-397 ◽  
Author(s):  
J.H. James ◽  
B.J. Kellett ◽  
A. Gauzzi ◽  
B. Dwir ◽  
D. Pavuna
Keyword(s):  
Thin Films ◽  
Ion Beam

Ion beam sputter deposition of layered magnetic thin films

1983 ◽  
Vol 35 (1-3) ◽  
pp. 89-92 ◽  
Author(s):  
J.W. Smits ◽  
H.A. Algra ◽  
U. Enz ◽  
R.P. van Stapele
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Magnetic Thin Films ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

Processing-structure relations for ferroelectric thin films deposited by ion beam sputter deposition

1991 ◽  
Vol 116 (1) ◽  
pp. 35-49 ◽  
Author(s):  
Angus Kingon ◽  
Michael Ameen ◽  
Orlando Auciello ◽  
Kenneth Gifford ◽  
Husam Al-Shareef ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Ferroelectric Thin Films ◽  
Ion Beam Sputter Deposition

Changes in the electrical conductivity of glass, quartz, Au, C, and MoS2 films under influence of continuous proton injection

2021 ◽  
Vol 10 ◽  
pp. 37-46
Author(s):  
G. S. Burkhanov ◽  
◽  
S. A. Lachenkov ◽  
M. A. Kononov ◽  
A. U. Bashlakov ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Ion Beam ◽  
Test Sample ◽  
Ion Source ◽  
Gold Target ◽  
Glass Substrates ◽  
Wide Range ◽  
Continuous Stream ◽  
Conductivity Of Thin Films

Changes in the electrical conductivity of a wide range of materials with different crystal-chemical types and electrophysical properties (quartz, glass, molybdenum disulfide, graphite, gold) under continuous proton injection are studied. Film samples of layered MoS2 and graphite compounds were obtained on rough surfaces of glass or quartz by mechanical rubbing of powder. Gold films are formed on glass substrates by magnetron sputtering of a gold target. To create a continuous stream of protons injected into the test sample, a stationary ion source with a cold cathode and a magnetic field forming an ion beam of relatively low intensity was used. The current in the ion beam is up to 1.2 mA, the pressure of hydrogen in the chamber is ~10 – 2 Pa, the energy of hydrogen ions is from 1 to 4 keV. The experimental results indicate that under conditions of continuous proton injection, the electrical conductivity of thin films with a layered structure (MoS2 and graphite) increases sharply (by 4 – 5 orders of magnitude). This effect increases when the temperature decreases from ~ 293 to ~ 77 K, as well as when the number of charges supplied to the sample increases. In the case of continuous injection of protons into massive dielectrics (glass, quartz) and thin films of gold, no noticeable change in electrical conductivity was detected.

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