Molecular Dynamics Simulation of the Physics of Thin Film Growth on Silicon: Effects of the Properties of Interatomic Potential Models

1989 ◽  
pp. 139-145
Author(s):  
W. Lowell Morgan
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Film Growth ◽  
Interatomic Potential ◽  
Thin Film Growth ◽  
Dynamics Simulation ◽  
Potential Models

Molecular dynamics simulation about porous thin-film growth in secondary deposition

2007 ◽  
Vol 253 (18) ◽  
pp. 7471-7477 ◽  
Author(s):  
Huawei Chen ◽  
A. Kiet Tieu ◽  
Qiang Liu ◽  
Ichiro Hagiwara ◽  
Cheng Lu
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Film Growth ◽  
Thin Film Growth ◽  
Dynamics Simulation ◽  
Porous Thin Film

scholarly journals Molecular dynamics simulation of Al–Co–Cr–Cu–Fe–Ni high entropy alloy thin film growth

2016 ◽  
Vol 68 ◽  
pp. 78-86 ◽  
Author(s):  
Lu Xie ◽  
Pascal Brault ◽  
Anne-Lise Thomann ◽  
Xiao Yang ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Film Growth ◽  
Thin Film Growth ◽  
Dynamics Simulation ◽  
High Entropy Alloy ◽  
Alloy Thin Film ◽  
High Entropy

Molecular Dynamics Simulation of Hydrogenated Amorphous Silicon with Tersoff Potential

1994 ◽  
Vol 336 ◽  
Author(s):  
Tatsuya Ohira ◽  
Takaji Inamuro ◽  
Takeshi Adachi
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Film Growth ◽  
Interatomic Potential ◽  
Hydrogenated Amorphous Silicon ◽  
Thin Film Growth ◽  
Dynamics Simulation ◽  
Growth Processes ◽  
Hydrogenated Amorphous

ABSTRACTA Molecular dynamics method with a Many-body Tersoff-type interatomic potential has been being applied to analyses of hydrogenated Amorphous silicon (a-Si:H) thin-film growth processes. As a first step toward film growth simulations, Molecular dynamics simulations of SiH3 radical, which would be a significant precursor for the a-Si:H thin-film growth processes, and a-Si:H formation with a rapid quenching method have been performed by developing new Tersoff-type interatomic potential between Si and H in this study. Visualization of SiH3 radical dynamics by computer graphics has made it possible to observe the inversion and rotation of SiH3 radical, which had been predicted by infrared diode-laser spectroscopie measurement in other group. In addition, visualization of the a-Si:H sample has helped us to find that there are some microcavities in the sample and that there are two kinds of hydrogen in the sample, gathering closely together while lying scattered, which had been predicted in IR absorption experimental results.

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