Clustering of Metals on Semiconductors Surfaces: Relation to Metallicity, Surface Diffusion, Growth Modes and Schottky Barriers

1992 ◽  
pp. 99-114
Author(s):  
K. E. Miyano ◽  
D. M. King ◽  
C. J. Spindt ◽  
W. E. Spicer ◽  
T. Kendelewicz ◽  
...  
Keyword(s):  
Surface Diffusion ◽  
Schottky Barriers ◽  
Diffusion Growth ◽  
Growth Modes

A Numerical Study of Stress Controlled Surface Diffusion During Epitaxial Film Growth

1994 ◽  
Vol 356 ◽  
Author(s):  
Cheng-Hsin Chiu ◽  
Huajian Gao
Keyword(s):  
Surface Diffusion ◽  
Film Growth ◽  
Numerical Study ◽  
Morphological Evolution ◽  
Film Surface ◽  
Numerical Results ◽  
Simultaneous Action ◽  
Surface Evolution ◽  
Growth Modes ◽  
Film Substrate

AbstractA two-dimensional numerical simulation is performed to model the morphological evolution of a strained film growing heteroepitaxially on a substrate under simultaneous action of vapor deposition and surface diffusion. To facilitate numerical implementation, a continuum boundary layer model is proposed to account for the influence of film/substrate interface on the film growth pattern. Discussions are focused on the Stranski-Krastanow growth mode, although our model is capable of explaining Frank-van der Merwe and Volmer-Weber growth modes as well. Both first-order perturbation and numerical results are developed to demonstrate that the film surface tends to remain flat during the initial stage of growth and that surface roughening occurs once the film thickness exceeds a critical value, in consistency with experimentally observed patterns of S-K growth. Numerical results further show that, depending on the deposition rate, the surface evolution could lead to a steady state morphology, unstable cusp formation, or growing islands with flattened valleys.

Monolayer and multilayer surface diffusion, growth mode and thermal stability of indium on W {100}

1986 ◽  
Vol 173 (2-3) ◽  
pp. 618-638 ◽  
Author(s):  
M.A. Morris ◽  
C.J. Barnes ◽  
David A. King
Keyword(s):  
Thermal Stability ◽  
Surface Diffusion ◽  
Growth Mode ◽  
Diffusion Growth ◽  
Thermal Stability Of

Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire

1996 ◽  
Vol 1 ◽  
Author(s):  
J. L. Rouviere ◽  
M. Arlery ◽  
R. Niebuhr ◽  
K. H. Bachem ◽  
Olivier Briot
Keyword(s):  
Surface Diffusion ◽  
Convergent Beam Electron Diffraction ◽  
Growth Modes ◽  
Transmission Electron ◽  
Different Types ◽  
Crystallographic Structures ◽  
Image Position ◽  
Convergent Beam ◽  
Surface Morphologies ◽  
Hexagonal Columnar

GaN layers deposited by MOCVD on sapphire have been characterized by Transmission Electron Microscopy (TEM). Two substrate orientations were used, (0 0 0 1) and(2 0).We determine the crystallographic structures (defect content and layer polarity) of three different types of GaN layers with different surface morphologies. Convergent Beam Electron Diffraction studies were particularly important to determine the polarity of the GaN layers. We find that polarity and surface diffusion are the factors that control the different growth modes. Unipolarity is obtained thanks to the annealing of the low temperature buffer layer or/and thanks to the nitridation of the sapphire substrate.Hexagonal pyramids and flat tops are formed when the material has a dominant N-polarity. The pyramids contain many tiny hexagonal columnar Inversion Domains (IDs). These pyramids are formed when the tiny Ga-polar IDs grow faster than the surrounding N-polar matrix. Flat GaN layers are unipolar, with a Ga polarity. Rough grainy layers which are unipolar (Ga-polarity) are obtained when surface diffusion is not high enough.

scholarly journals TGS CRYSTAL GROWTH POLYMORPHISM AND SURFACE DIFFUSION GROWTH MECHANISM

2000 ◽  
Vol 49 (9) ◽  
pp. 1873
Author(s):  
SUN DA-LIANG ◽  
YU XI-LING ◽  
WANG YAN ◽  
GU QING-TIAN
Keyword(s):  
Crystal Growth ◽  
Surface Diffusion ◽  
Growth Mechanism ◽  
Diffusion Growth

A theory of contamination in electron microscopes by surface diffusion

1978 ◽  
Vol 36 (1) ◽  
pp. 116-117
Author(s):  
J.T. Fourie
Keyword(s):  
Electron Beam ◽  
Surface Diffusion ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Physical Parameters ◽  
Carbon Compounds ◽  
Hydrocarbon Molecules ◽  
Electron Microscopes ◽  
Primary Electrons ◽  
Long Chain

Contamination in electron microscopes can be a serious problem in STEM or in situations where a number of high resolution micrographs are required of the same area in TEM. In modern instruments the environment around the specimen can be made free of the hydrocarbon molecules, which are responsible for contamination, by means of either ultra-high vacuum or cryo-pumping techniques. However, these techniques are not effective against hydrocarbon molecules adsorbed on the specimen surface before or during its introduction into the microscope. The present paper is concerned with a theory of how certain physical parameters can influence the surface diffusion of these adsorbed molecules into the electron beam where they are deposited in the form of long chain carbon compounds by interaction with the primary electrons.

Resonant tunneling through traps in Schottky barriers

1977 ◽  
Vol 38 (11) ◽  
pp. 1443-1448 ◽  
Author(s):  
G. Sarrabayrouse ◽  
J. Buxo ◽  
D. Esteve
Keyword(s):  
Resonant Tunneling ◽  
Schottky Barriers

Blue Sapphire with Partial Red Surface Diffusion

2020 ◽  
Vol 37 (1) ◽  
pp. 23-24
Author(s):  
Bear Williams ◽  
Cara Williams ◽  
Charles I. Carmona
Keyword(s):  
Surface Diffusion
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