Study of Atomic Subshell Properties by Electron Spectrometry

1976 ◽  
pp. 89-97 ◽  
Author(s):  
M. O. Krause ◽  
F. Wuilleumier
Keyword(s):  
Electron Spectrometry

Advantages of maximum likelihood methods for PRBS modulated TOF electron spectrometry

2002 ◽  
Vol 502-503 ◽  
pp. 232-239 ◽  
Author(s):  
L.J. LeGore ◽  
R.H. Jackson ◽  
Z. Yang ◽  
P. Kleban ◽  
L.K. DeNoyer ◽  
...  
Keyword(s):  
Maximum Likelihood ◽  
Likelihood Methods ◽  
Maximum Likelihood Methods ◽  
Electron Spectrometry

Investigation of Pt Bottom Electrodes for "In-Situ" Deposited Pb(Zr,Ti)O3 (PZT) thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Rainer Bruchhaus ◽  
Dana Pitzer ◽  
Oliver Eibl ◽  
Uwe Scheithauer ◽  
Wolfgang Hoesler
Keyword(s):  
Elevated Temperatures ◽  
Diffusion Processes ◽  
Rutherford Backscattering Spectrometry ◽  
Layer Sequence ◽  
Si Substrates ◽  
Transmission Electron ◽  
In Situ Deposition ◽  
Electron Spectrometry ◽  
Heating Up

AbstractThe deposition of the bottom electrode plays a key role in the fabrication of ferroelectric capacitors. Processing at elevated temperatures of up to 800°C can give rise to diffusion processes and thereof formation of harmful dielectric layers.In this paper we used Rutherford backscattering spectrometry (RBS), Auger electron spectrometry (AES) and transmission electron microscopy (TEM) to study Pt/Ti/SiO2/Si substrates with various thicknesses of the Ti and Pt layers. During heating up to about 450°C in vacuum the initial layer sequence remains unchanged. However, drastic changes occur when the electrodes are exposed to Ar/O2 atmosphere during heat treatment. Oxidation induced diffusion of Ti into Pt and oxidation of Ti were observed. A Pt electrode with a 100 nm thick Ti adhesion layer proved to be suitable for the "in-situ" deposition of PZT films.

Two-colour laser excitation as a way to set an absolute energy scale in photodetachment-microscopy based electron spectrometry

2007 ◽  
Vol 275 (1) ◽  
pp. 190-195
Author(s):  
Cyril Drag ◽  
Walid Chaibi ◽  
Christian Delsart ◽  
Christophe Blondel
Keyword(s):  
Laser Excitation ◽  
Energy Scale ◽  
Absolute Energy ◽  
Electron Spectrometry

Autoionisation of N5+(nln'l') with n=2,3,4 and n'⩾n measured by electron spectrometry in collisions of N7+with He and H2, at 4.9 keV amu-1

1984 ◽  
Vol 17 (5) ◽  
pp. L127-L131 ◽  
Author(s):  
A Bordenave-Montesquieu ◽  
P Benoit-Cattin ◽  
A Gleizes ◽  
A I Marrakchi ◽  
S Dousson ◽  
...  
Keyword(s):  
Electron Spectrometry

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Quantitative approach of Auger electron spectrometry

1977 ◽  
Vol 69 (2) ◽  
pp. 547-564 ◽  
Author(s):  
F Pons ◽  
J Le Héricy ◽  
J.P Langeron
Keyword(s):  
Auger Electron ◽  
Quantitative Approach ◽  
Auger Electron Spectrometry ◽  
Electron Spectrometry
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