Influence of Parameters of Internal Voltage Sensing Board on Stray Capacitance of GIS

2019 ◽  
pp. 449-455
Author(s):  
Xinglan Guo ◽  
Chengyang Chu ◽  
Xiaobin Chen ◽  
Haisen Zhao ◽  
Jie Huang
Keyword(s):  
Stray Capacitance ◽  
Voltage Sensing

scholarly journals Influence of Installation Mode of Sensing Board on Accuracy of Smart Voltage Measurement in Switch Cabinets

2021 ◽  
Vol 2066 (1) ◽  
pp. 012108
Author(s):  
Jie Huang ◽  
Xiaochen Niu ◽  
Zihan Zhou
Keyword(s):  
Three Dimensional ◽  
Induced Voltage ◽  
Stray Capacitance ◽  
Voltage Measurement ◽  
Three Dimensional Model ◽  
Voltage Transformer ◽  
Voltage Sensing ◽  
Element Analysis ◽  
Capacitor Voltage ◽  
Working Principle

Abstract Based on the working principle of capacitor voltage transformer, this paper analyzes the influence of the installation mode of induced voltage board in the switchgear on the spatial stray capacitance by taking the switchgear, which is widely used as the carrier. Ansys finite element analysis software is used to establish the models of the voltage sensing board under different installation modes, and the influence of environmental factors such as the position, structure and temperature of the voltage sensing board on the stray capacitance between the bus bar and the sensing board is analyzed; The three-dimensional model of electric field shield plate structure is established for simulation. The installation mode of the voltage sensing board and the influence of the shielding board on the stray capacitance are revealed.

A Simple Technique for Estimating the Winding Stray Capacitance of High-Frequency Three-Phase Common-Mode Inductors

2019 ◽  
Vol 139 (3) ◽  
pp. 339-347 ◽  
Author(s):  
Shotaro Takahashi ◽  
Satoshi Ogasawara ◽  
Masatsugu Takemoto ◽  
Koji Orikawa ◽  
Michio Tamate
Keyword(s):  
High Frequency ◽  
Simple Technique ◽  
Stray Capacitance ◽  
Common Mode ◽  
Three Phase

New Molecular Scaffolds for Fluorescent Voltage Indicators

2018 ◽  
Author(s):  
Steven Boggess ◽  
Shivaani Gandhi ◽  
Brian Siemons ◽  
Nathaniel Huebsch ◽  
Kevin Healy ◽  
...  
Keyword(s):  
Membrane Potential ◽  
Action Potentials ◽  
Induced Pluripotent Stem Cell ◽  
Molecular Wire ◽  
Voltage Sensing ◽  
Design Synthesis ◽  
Cardiac Action ◽  
Action Potential Waveform ◽  
Induced Pluripotent ◽  
Voltage Sensing Domain

<div> <p>The ability to non-invasively monitor membrane potential dynamics in excitable cells like neurons and cardiomyocytes promises to revolutionize our understanding of the physiology and pathology of the brain and heart. Here, we report the design, synthesis, and application of a new class of fluorescent voltage indicator that makes use of a fluorene-based molecular wire as a voltage sensing domain to provide fast and sensitive measurements of membrane potential in both mammalian neurons and human-derived cardiomyocytes. We show that the best of the new probes, fluorene VoltageFluor 2 (fVF 2) readily reports on action potentials in mammalian neurons, detects perturbations to cardiac action potential waveform in human induced pluripotent stem cell (hiPSC)-derived cardiomyocytes, shows a substantial decrease in phototoxicity compared to existing molecular wire-based indicators, and can monitor cardiac action potentials for extended periods of time. Together, our results demonstrate the generalizability of a molecular wire approach to voltage sensing and highlights the utility of fVF 2 for interrogating membrane potential dynamics.</p> </div>

Quantum Calculation of Proton and Other Charge Transfer Steps in Voltage Sensing in the Kv1.2 Channel

2019 ◽  
Author(s):  
Alisher M Kariev ◽  
Michael Green
Keyword(s):  
Charge Transfer ◽  
Energy Charge ◽  
Quantum Calculation ◽  
Quantum Calculations ◽  
Gating Current ◽  
Transmembrane Segment ◽  
Voltage Sensing ◽  
Standard Models ◽  
Charge Displacement ◽  
Voltage Sensing Domain

Quantum calculations on 976 atoms of the voltage sensing domain of the K<sub>v</sub>1.2 channel, with protons in several positions, give energy, charge transfer, and other properties. Motion of the S4 transmembrane segment that accounts for gating current in standard models is shown not to occur; there is H<sup>+ </sup>transfer instead. The potential at which two proton positions cross in energy approximately corresponds to the gating potential for the channel. The charge displacement seems approximately correct for the gating current. Two mutations are accounted for (Y266F, R300cit, cit =citrulline). The primary conclusion is that voltage sensing depends on H<sup>+</sup> transfer, not motion of arginine charges.

Opto-mechanical modeling and experimental implementation of an FBG-based piezoelectric bimorph actuator for high voltage sensing applications

2021 ◽  
pp. 1045389X2110282
Author(s):  
Raúl E Jiménez ◽  
José P Montoya ◽  
Rodrigo Acuna Herrera
Keyword(s):  
High Voltage ◽  
Good Accuracy ◽  
Correction Term ◽  
Experimental Results ◽  
Mechanical Modeling ◽  
Piezoelectric Bimorph ◽  
Linear Strain ◽  
Voltage Sensing ◽  
Sensing Applications ◽  
Experimental Implementation

This paper proposes a highly simplified optical voltage sensor by using a piezoelectric bimorph and a Fiber Bragg Grating (FBG) that can be used for high voltage applications with a relatively good accuracy and stability. In this work the theoretical framework for the whole opto-mechanical operation of the optical sensor is detailed and compared to experimental results. In the analysis, a correction term to the electric field is derived to account for the linear strain distribution across the piezoelectric layer improving the designing equations and giving more criteria for future developments. Finally, some experimental results from a laboratory scale optical-based high voltage sensing setup are discussed, and shown to be in excellent agreement with theoretical expected behavior for different voltage magnitudes.

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