Equivalent circuit modeling in GaN wireless power transmission including stray inductance and capacitance by measuring radiated emission

We establish the method for estimating the stray elements of the GaN-WPT circuit by measuring the radiated emission around the GaN switching device. By controlling the circuit supply voltage, the spectrum peak shift due to the output capacitance of the GaN-HEMT is observed. It is found that these peak shift characteristics include the influence of both the stray wire inductance and stray capacitance. By the fitting using the series resonance model, the value of the stray inductance and stray capacitance can be estimated in the non-destructive measurement in the GaN-WPT circuit.

Influence of Installation Mode of Sensing Board on Accuracy of Smart Voltage Measurement in Switch Cabinets

Based on the working principle of capacitor voltage transformer, this paper analyzes the influence of the installation mode of induced voltage board in the switchgear on the spatial stray capacitance by taking the switchgear, which is widely used as the carrier. Ansys finite element analysis software is used to establish the models of the voltage sensing board under different installation modes, and the influence of environmental factors such as the position, structure and temperature of the voltage sensing board on the stray capacitance between the bus bar and the sensing board is analyzed; The three-dimensional model of electric field shield plate structure is established for simulation. The installation mode of the voltage sensing board and the influence of the shielding board on the stray capacitance are revealed.

Electrical Stress on the Medium Voltage Medium Frequency Transformer

This paper proposes an equivalent circuit model to obtain the transient electrical stress quantitatively in medium voltage medium frequency transformers in modern power electronics. To verify this model, transient simulation is performed on a 1.5 kV/1 kHz transformer, revealing voltage overshoot quantitatively between turns and layers of the transformer’s HV winding. Effects of rise time of the input pulse voltage, stray capacitance of the winding insulation, and their interactions on the voltage overshot magnitude are presented. With these results, we propose limiting the voltage overshoot and, thereafter, enhancing medium voltage medium frequency transformer’s insulation capability, which throws light on the transformer’s insulation design. Additionally, guidance on the future studies on aging and endurance lifetime of the medium voltage medium frequency transformer’s insulation could be given.

Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs

Wide-bandgap technology evolution compels the advancement of efficient pulse-width gate-driver devices. Integrated enhanced gate-driver planar transformers are a source of electromagnetic disturbances due to inter-winding capacitances, which serve as a route to common-mode(CM) currents. This paper will simulate, via ANSYS Q3D Extractor, the unforeseen parasitic effects of a pulse planar transformer integrated in a SiC MOSFET gate-driver card. Moreover, the pulse transformer will be ameliorated by adding distinctive shielding layers aiming to suppress CM noise effects and endure high dv/dt occurrences intending to validate experimental tests. The correlation between stray capacitance and dv/dt immunity results after shielding insertion will be reported.

Studying the Effect of Stray Capacitance on the Measurement Accuracy of the CVT Based on the Boundary Element Method

The capacitive voltage transformer (CVT) is a special measuring and protecting device, which is commonly applied in high-voltage power systems. Its measurement accuracy is affected seriously by the stray capacitances of the capacitance voltage divider (CVD) to ground and other charged parts. In this study, based on the boundary element method, a mathematical model was established firstly to calculate the stray capacitance. Then, the voltage distribution of the CVD was obtained by the CVD’s equivalent circuit model. Next, the effect of stray capacitance on the voltage distribution and the voltage difference ratio (VDR) of CVD was analysed in detail. We finally designed three types of shield and optimized their structure parameters to reduce VDR. The results indicated that the average deviation rate between calculated and experimental measured voltages is only 0.015%; that is to say, the method has high calculation precision. The stray capacitance of the CVD to ground is far larger than that of the CVD to the high-voltage terminal. It results in the inhomogeneous distribution of voltage and the increase of VDR. For the test CVT, its VDR exceeds the requirement of class 0.2. Among all of the three types of shield, the C type reduced the VDR of the test CVT the most. After optimizing the structure parameters of C-type shield, the VDR is further reduced to 0.08%. It is not only in accord with the requirement of class 0.2 but also has an adequate margin.

Estimation and correction of instrument artefacts in dynamic impedance spectra

Dynamic impedance spectroscopy is one of the most powerful techniques in the qualitative and quantitative mechanistic studies of electrochemical systems, as it allows for time-resolved investigation and dissection of various physicochemical processes occurring at different time scales. However, due to high-frequency artefacts connected to the non-ideal behaviour of the instrumental setup, dynamic impedance spectra can lead to wrong interpretation and/or extraction of wrong kinetic parameters. These artefacts arise from the non-ideal behaviour of the voltage and current amplifier (I/E converters) and stray capacitance. In this paper, a method for the estimation and correction of high-frequency artefacts arising from non-ideal behaviour of instrumental setup will be discussed. Using resistors, $$[\hbox {Fe(CN)}_6]^{3-/4-}$$ [ Fe(CN) 6 ] 3 - / 4 - redox couple and nickel hexacyanoferrate nanoparticles, the effect of high-frequency artefacts will be investigated and the extraction of the impedance of the system from the measured dynamic impedance is proposed. It is shown that the correction allows acquiring proper dynamic impedance spectra at frequencies higher than the bandwidth of the potentiostat, and simultaneously acquire high precision cyclic voltammetry.