Numerical Investigation of Tri-Axial Braid Composite Structures as Crush Specimens Using the VPS-Solver

2020 ◽  
pp. 168-178
Author(s):  
Sven Hennemann ◽  
Volker Hohm ◽  
Peter Horst ◽  
Lasse Twardy ◽  
Philip Zimmermann
Keyword(s):  
Numerical Investigation ◽  
Composite Structures

An experimental–numerical investigation of hydrothermal response in adhesively bonded composite structures

2015 ◽  
Vol 73 ◽  
pp. 176-185 ◽  
Author(s):  
Roohollah Sarfaraz ◽  
Luis P. Canal ◽  
Georgios Violakis ◽  
John Botsis ◽  
Véronique Michaud ◽  
...  
Keyword(s):  
Numerical Investigation ◽  
Composite Structures ◽  
Adhesively Bonded ◽  
Bonded Composite

Numerical Investigation of Dynamically Loaded Bolted Joints in Carbon Fibre Composite Structures

2009 ◽  
Vol 17 (3) ◽  
pp. 329-346 ◽  
Author(s):  
Garth M. Pearce ◽  
Alastair F. Johnson ◽  
Rodney S. Thomson ◽  
Donald W. Kelly
Keyword(s):  
Carbon Fibre ◽  
Numerical Investigation ◽  
Composite Structures ◽  
Fibre Composite ◽  
Bolted Joints ◽  
Carbon Fibre Composite ◽  
Dynamically Loaded

Charpy impact tests on composite structures – An experimental and numerical investigation

2008 ◽  
Vol 68 (12) ◽  
pp. 2391-2400 ◽  
Author(s):  
W. Hufenbach ◽  
F. Marques Ibraim ◽  
A. Langkamp ◽  
R. Böhm ◽  
A. Hornig
Keyword(s):  
Numerical Investigation ◽  
Composite Structures ◽  
Charpy Impact ◽  
Impact Tests

Experimental and Numerical Investigation of PZT Response in Composite Structures with Variable Degradation Levels

2019 ◽  
Vol 28 (6) ◽  
pp. 3239-3246 ◽  
Author(s):  
Vittorio Memmolo ◽  
Hassan Elahi ◽  
Marco Eugeni ◽  
Ernesto Monaco ◽  
Fabrizio Ricci ◽  
...  
Keyword(s):  
Numerical Investigation ◽  
Composite Structures

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

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