Technology for Creating Compacted Bulk Layer of Catalysts or Adsorbents

Author(s):  
L. T. Fayzullina ◽  
E. Yu. Tumanova
Keyword(s):  
2016 ◽  
Vol 50 (5) ◽  
pp. 586-589
Author(s):  
V. Ya. Aleshkin ◽  
A. A. Dubinov ◽  
K. E. Kudryavtsev ◽  
P. A. Yunin ◽  
M. N. Drozdov ◽  
...  

2008 ◽  
Vol 130 (44) ◽  
pp. 14459-14461 ◽  
Author(s):  
Kenichi Oyaizu ◽  
Yuko Ando ◽  
Hiroaki Konishi ◽  
Hiroyuki Nishide

2009 ◽  
Vol 92 (11) ◽  
pp. 2578-2582 ◽  
Author(s):  
Haruhiko Morito ◽  
Tomoyuki Ide ◽  
Taiki Karahashi ◽  
Hironori Orikasa ◽  
Takahiro Yamada ◽  
...  
Keyword(s):  

1994 ◽  
Vol 339 ◽  
Author(s):  
D. Prasad Beesabathina ◽  
K. Fekade ◽  
K. Wongchotigul ◽  
M. G. Spencer ◽  
L. Salamanca-Riba

ABSTRACTThe growth morphology and microstructure of SiC/AlN/6H-SiC, SiC/AlN/SiC/Si, and SiC/AlN/Si heterostructures grown by LPCVD were studied using transmission electron microscopy. The SiC/AIN bilayers grown on 6H-SiC substrates were single crystalline and comprised of 3C-SiC and 2H-AlN. The epitaxial relationship between 2H-AlN and 6H-SiC is [0001]AlN//[0001]SiC. The SiC/AlN/SiC trilayers and the SiC/AIN bilayer grown on (001)Si were composed of 3H-SiC and 2H-AlN. However, the 2H-AlN layer was polycrystalline even though the (001)3C-SiC was single crystalline. The preferred orientation of the AlN layers in SiC/AlN/SiC/Si and SiC/AlN/Si are [0112] and [0002], respectively. The AlN/3C-SiC interface is relatively sharp compared to the AIN/Si interface in which an amorphous layer close to the interface was observed. In general, the polycrystalline AlN structure has two distinct layers: (1) nucleation layer and (2) bulk layer. High resolution lattice images of the polycrystalline AlN showed amorphous areas and small misoriented crystallites in the nucleation layer. The bulk layer consists of preferentially oriented large columnar grains.


2008 ◽  
Vol 47-50 ◽  
pp. 419-422
Author(s):  
Meng Kai Hsu ◽  
Jung Hui Tsai ◽  
Shao Yen Chiu ◽  
Chung Hsien Wu ◽  
Kum Chieh Liang ◽  
...  

In this work, an application of wide-gap updoed-Al0.22Ga0.78As bulk to perform the field-plate gate (FP-gate) on Al0.22Ga0.78As/In16Ga84As/Al0.22Ga0.78As DH-HEMTs was investigated. The simulated FPG-devices with a bulk thickness of 1200 Å, exhibit an excellent dispersing property to the electric field peak under gate electrode near to drain side, hence, the breakdown characteristics were effectively improved. Measured gate-diode performance of FPG-device presents a higher breakdown voltage (VBR) of -25.5 V than devices with single recess (SRG-device). Enhancement of device breakdown is contributive to microwave power performances. At 2.4 GHz load-pull measurement of studied devices which were biased at class AB operation, the saturated output power (POUT), power gain (GP) and power-added efficiency (PAE) were 13.06 dBm (202 mW/mm), 12.8 db and 47.3% for FPG-device. These measured results of SRG-device were 10.3 dBm(107 mW/mm), 13.2 db and 38.5%, According to the simulated results, FPG-devices structuring with a bulk layer exhibit excellent performance for high breakdown and microwave power operation.


2017 ◽  
Vol 25 (4) ◽  
Author(s):  
I. М. Loza ◽  
V. I. Chiorna

The challenge of degradation of natural ecosystems because of human activity is considered by the world community to be the most serious problems facing mankind. As a result of mineral extraction, man-made landscapes and environmentally ruined areas replace natural habitats and agroecosystems; a whole spectrum of man-made processes are typical for such landscapes, which leads to a decrease in species richness and biological diversity within such areas. Degraded territories formed in the process of coal mining are often partially restored through remediation measures. During the implementation of the technical stage of remediation, substrates with different potential fertility having different environmental properties and quality are used. However, in quality assessment of remediated soils insufficient attention is paid to restoration of the environmental properties of the soils, namely their suitability for the existence of soil biota, which ensures the soil’s sustainability and vitality. The main indicators determining the productivity of remediated lands and the degree of their suitability for the existence of soil biota are values of actual acidity and degree of salinity. An assessment of the quality of reclaimed lands of  the Ordzhonikidzevsky ore mining and processing enterprise was carried out on the example of the Zaporizhsky open-cast mine with the aim of assessing the possibility of their economic use and suitability for the existence of soil biota , as well as to make recommendations for further rational use. It was found that  main characteristics  of the study area (capacity of bulk humic layer, content of humus in the bulk layer, content of physical clay in the bulk humic layer and in the subsoil, average soil density in the meter bulk layer, salinity of the bulk humic layer and subsoil, composition and properties of subsoil), of the Zaporizhzhya quarry's reclamation is suitable for the further settlement and successful existence of the soil biota. It is concluded that as a result of the technical stage of reclamation, an artificial reclaimed soil was obtained, which according to its characteristics is similar to the primary zonal soils that were located in this area prior to mining; the recultivated soil has somewhat lower fertility and greater salinity at the lower horizons, but is capable of performing ecological functions and can not only be used for economic purposes, but also perform ecological functions, serving as an environment for the existence of soil biota.


1977 ◽  
Vol 32 (9) ◽  
pp. 1049-1052 ◽  
Author(s):  
T. Grandke ◽  
K. Heinz

Abstract The intensity spectra of the platinum (100) surface covered with cesium have been analysed by means of a dynamical calculation (RFS) of the diffraction processes using a simplified model of the adsorbate layer. Convergence problems were introduced by the relatively large size of the cesium atoms and the superstructure unit mesh. Yet the agreement between theory and experiment allows to determine a spacing of 4.25 + 0.1 Å between the bulk crystal and the overlayer. According to the model most cesium atoms occupy hollow positions on the topmost (100) bulk layer of platinum. However, there is also a considerable amount of bridge positions giving a mixture of sites, which is responsible for the streaking of special spots observed in experiment.


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