Low-Latency Guarantee Protocol Based on Multi-links Scheduling Random Access in the Next Generation WLAN: IEEE 802.11be

2021 ◽  
pp. 286-296
Author(s):  
Luoting Gan ◽  
Bo Li ◽  
Mao Yang ◽  
Zhongjiang Yan
Keyword(s):  
Random Access ◽  
Low Latency ◽  
Next Generation ◽  
The Next Generation Wlan

DRA-OFDMA: Double Random Access Based QoS Oriented OFDMA MAC Protocol for the Next Generation WLAN

2019 ◽  
Vol 24 (5) ◽  
pp. 1425-1436
Author(s):  
Run Zhou ◽  
Bo Li ◽  
Mao Yang ◽  
Zhongjiang Yan ◽  
Annan Yang
Keyword(s):  
Mac Protocol ◽  
Random Access ◽  
Next Generation ◽  
The Next Generation Wlan

scholarly journals Low-latency random access in wireless networks

ICT Express ◽  
2021 ◽  
Vol 7 (1) ◽  
pp. 41-48
Author(s):  
Eunkyung Kim ◽  
Heesoo Lee
Keyword(s):  
Wireless Networks ◽  
Random Access ◽  
Low Latency

scholarly journals Low latency network and distributed storage for next generation HPC systems: the ExaNeSt project

2017 ◽  
Vol 898 ◽  
pp. 082045 ◽  
Author(s):  
R Ammendola ◽  
A Biagioni ◽  
P Cretaro ◽  
O Frezza ◽  
F Lo Cicero ◽  
...  
Keyword(s):  
Distributed Storage ◽  
Low Latency ◽  
Next Generation

scholarly journals Ferroelectric HfO2-based materials for next-generation ferroelectric memories

2016 ◽  
Vol 06 (02) ◽  
pp. 1630003 ◽  
Author(s):  
Zhen Fan ◽  
Jingsheng Chen ◽  
John Wang
Keyword(s):  
Random Access ◽  
Complementary Metal Oxide Semiconductor ◽  
Ferroelectric Materials ◽  
Oxide Semiconductor ◽  
Next Generation ◽  
New Class ◽  
Generation Cost ◽  
Potential Applications ◽  
Cost Efficient ◽  
Ferroelectric Memories

Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

An OFDMA-based joint reservation and cooperation MAC protocol for the next generation WLAN

2017 ◽  
Vol 25 (2) ◽  
pp. 471-485 ◽  
Author(s):  
Yongping Zhang ◽  
Bo Li ◽  
Mao Yang ◽  
Zhongjiang Yan ◽  
Xiaoya Zuo
Keyword(s):  
Mac Protocol ◽  
Next Generation ◽  
The Next Generation Wlan
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