Indentation Testing

2021 ◽  
pp. 269-283
Author(s):  
Emmanuel E. Gdoutos
Keyword(s):  
Indentation Testing

Identification of local constitutive model from micro-indentation testing

2011 ◽  
pp. 177-182 ◽  
Author(s):  
Y Marco ◽  
V Le Saux ◽  
G Bles ◽  
S Calloch ◽  
P Charrier
Keyword(s):  
Constitutive Model ◽  
Indentation Testing ◽  
Micro Indentation

From Niihara's Equation to Peculiar Nanoindentation Deformation of Ceramics and Semiconductors

2006 ◽  
Vol 317-318 ◽  
pp. 293-296
Author(s):  
Roman Nowak ◽  
Ari T. Hirvonen ◽  
Tohru Sekino
Keyword(s):  
Finite Element ◽  
Finite Element Modeling ◽  
Ceramic Materials ◽  
Spherical Indentation ◽  
Indentation Testing ◽  
Element Modeling ◽  
Slip Bands ◽  
Dislocation Movement

The present paper is based on the contribution by Niihara and his co-workers devoted to indentation testing of ceramic materials, while it provides new observations of peculiarities registered during nanoindentation of sapphire, GaAs and InGaNAs deposited by MBE-technique. Exploiting previous studies of the spherical indentation in sapphire, the present authors recognized different causes that result in the apparently similar pop-in phenomenon for sapphire and GaAs-based semiconductors. The finite element modeling of the quasi-plastic nanoindentation of the ( 1 1 20) plane of sapphire with the elastically deformable tip confirmed that the deformation of sapphire is governed by twinning which causes pop-in phenomenon, as suggested earlier by Niihara et al. The singularities registered for GaAs-based crystals are associated with dislocation movement within {111} slip bands, which is in contrast to the case of sapphire.

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