3-Dimensional Characteristic of Electric Field and Potential Induced by Internal Charging Effects in Typical PCB

2017 ◽  
pp. 455-470 ◽  
Author(s):  
Xiao-Jin Tang ◽  
Zhong Yi ◽  
Chao Zhang ◽  
Ye-Nan Liu ◽  
Zhi-Hao Wang ◽  
...  
Keyword(s):  
Electric Field ◽  
3 Dimensional ◽  
Dimensional Characteristic ◽  
Internal Charging

Numerische Untersuchungen charakteristischer Größen eines Plasmamodells

1968 ◽  
Vol 23 (5) ◽  
pp. 761-770
Author(s):  
Karlheinz Wilke
Keyword(s):  
Electric Field ◽  
Relaxation Times ◽  
Charged Particles ◽  
Density Fluctuations ◽  
Distribution Functions ◽  
Mean Square ◽  
3 Dimensional ◽  
Time Averages ◽  
The Mean ◽  
Predictor Corrector

A fully 3-dimensional plasma consisting of up to 96 charged particles is simulated in a computer. The plasma is confined to a sphere (or cube) with specularly reflecting walls. The forces are computed using a predictor corrector method with variable time steps. From initial configurations randomly chosen the evolution of the plasma is followed numerically. Distribution functions and moments with respect to various phase variables are obtained as time averages: the distribution of velocity, kinetic and potential energy, of the electric microfield, the micropotential as measured at a neutral point of reference (usually the center of the system) , the mean square electric field, the microfield correlation function and the particle relaxation times. As the sphere used in the experiments has dimensions only slightly larger than the Debye sphere, collective phenomena and those due to major density fluctuations cannot be expected. Despite these limitations the mean electric field is found to be high by approx. 10% compared to the Holtsmark field. Furthermore other comparisons to existing theories with respect to the variables already mentioned are carried out.

scholarly journals Electric Field Induced Heating and Energy Relaxation in GaN

2001 ◽  
Vol 693 ◽  
Author(s):  
T. A. Eckhause ◽  
Ö. Süzer ◽  
Ç. Kurdak ◽  
F. Yun ◽  
H. Morkoç
Keyword(s):  
Low Temperature ◽  
Electric Field ◽  
Power Dissipation ◽  
Electron Gas ◽  
Potential Scattering ◽  
Excess Noise ◽  
3 Dimensional ◽  
Sapphire Substrates ◽  
Dimensional Electron Gas ◽  
Gan Film

AbstractWe report results of an investigation of electric field induced heating at low temperature in GaN 3-dimensional electron gas films grown on sapphire substrates. The excess noise of the electron gas in a patterned GaN film, while the substrate is held at low temperature, is used to determine the electron temperature. We calculate the rate of power dissipation and compare our results with a calculation of acoustic deformation potential scattering processes in GaN. We discuss the existence of a thermal boundary resistance between the GaN film and the sapphire substrate.

scholarly journals 3-Dimensional Electric Field Distributions of Castellated and Straight Dielectrophoresis Electrodes for Cell Separation

2019 ◽  
Vol 48 (6) ◽  
pp. 1239-1249
Author(s):  
Farahdiana Wan Yunus ◽  
Muhammad Ramdzan Buyong ◽  
Jumril Yunas ◽  
Burhanudin Yeop Majlis ◽  
Azrul Azlan Hamzah
Keyword(s):  
Electric Field ◽  
Cell Separation ◽  
3 Dimensional ◽  
Field Distributions
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