scholarly journals 3-dimensional eksternal electric field effect (Stark effect) on the ground state energy of Tritium atom

2019 ◽  
Vol 1171 ◽  
pp. 012022
Author(s):  
I K Mahardika ◽  
A Harijanto ◽  
S Bahri ◽  
Z R Ridlo
Keyword(s):  
Electric Field ◽  
Ground State Energy ◽  
Ground State ◽  
Field Effect ◽  
Stark Effect ◽  
State Energy ◽  
Electric Field Effect ◽  
3 Dimensional ◽  
Tritium Atom

POLARON IN A QUANTUM DOT UNDER AN ELECTRIC FIELD

2007 ◽  
Vol 21 (24) ◽  
pp. 1635-1642
Author(s):  
MIAN LIU ◽  
WENDONG MA ◽  
ZIJUN LI
Keyword(s):  
Quantum Dot ◽  
Electric Field ◽  
Field Intensity ◽  
Ground State Energy ◽  
Ground State ◽  
Electric Field Intensity ◽  
State Energy ◽  
Theoretical Study ◽  
The Moment ◽  
Transformation Methods

We conducted a theoretical study on the properties of a polaron with electron-LO phonon strong-coupling in a cylindrical quantum dot under an electric field using linear combination operator and unitary transformation methods. The changing relations between the ground state energy of the polaron in the quantum dot and the electric field intensity, restricted intensity, and cylindrical height were derived. The numerical results show that the polar of the quantum dot is enlarged with increasing restricted intensity and decreasing cylindrical height, and with cylindrical height at 0 ~ 5 nm , the polar of the quantum dot is strongest. The ground state energy decreases with increasing electric field intensity, and at the moment of just adding electric field, quantum polarization is strongest.

BUILT-IN ELECTRIC FIELD EFFECT ON DONOR IMPURITIES IN STRAINED WURTZITE GaN/AlGaN ASYMMETRIC DOUBLE QUANTUM WELLS

2012 ◽  
Vol 26 (26) ◽  
pp. 1250172 ◽  
Author(s):  
JUN ZHU ◽  
SHI LIANG BAN ◽  
SI HUA HA
Keyword(s):  
Variational Method ◽  
Electric Field ◽  
Quantum Wells ◽  
Ground State ◽  
Field Effect ◽  
Binding Energies ◽  
Double Quantum ◽  
Electric Field Effect ◽  
Material Parameters ◽  
Asymmetric Double Quantum Wells

The ground state binding energies of donor impurities in strained [0001]-oriented wurtzite GaN / Al x Ga 1-x N asymmetric double quantum wells are investigated using a variational method combined with numerical computation. The built-in electric field due to the spontaneous and strain-induced piezoelectric polarization and the strain modification on material parameters are taken into account. The variations of binding energies versus the width of central barrier, the ratio of two well widths, and the impurity position are presented, respectively. It is found that the built-in electric field causes a mutation of binding energies with increasing the width of central barrier to some value. The results for symmetrical double quantum wells and without the built-in electric field are also discussed for comparison.

THE INFLUENCE OF ELECTRIC FIELD ON THE GROUND-STATE LIFETIME OF POLARON IN A PARABOLIC QUANTUM DOT

2011 ◽  
Vol 25 (03) ◽  
pp. 203-210
Author(s):  
WEI-PING LI ◽  
JI-WEN YIN ◽  
YI-FU YU ◽  
JING-LIN XIAO
Keyword(s):  
Quantum Dot ◽  
Electric Field ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Phonon Coupling ◽  
Phonon Interaction ◽  
Strong Electron ◽  
Electron Phonon Interaction ◽  
Parabolic Quantum Dot

The ground-state energy of polaron was obtained with strong electron-LO-phonon coupling by using a variational method of the Pekar type in a parabolic quantum dot (QD). Quantum transition occurs in the quantum system due to the electron-phonon interaction and the influence of temperature. That is the polaron transition from the ground-state to the first-excited state after absorbing a LO-phonon and it causes the changing of the polaron lifetime. Numerical calculations are performed and the results illustrate the relations of the ground-state lifetime of the polaron on the ground-state energy of polaron, the electric field strength, the temperature, the electron-LO-phonon coupling strength and the confinement length of the quantum dot.

scholarly journals Stark Effects on Band Gap and Surface Phonons of Semiconductor Quantum Dots in Dielectric Hosts

1995 ◽  
Vol 405 ◽  
Author(s):  
R. Mu ◽  
A. Ueda ◽  
Y -S. Tung ◽  
D. O. Henderson ◽  
Jane G. Zhu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Field Effect ◽  
Stark Effect ◽  
Center Frequency ◽  
Cdse Nanocrystals ◽  
Electric Field Effect ◽  
Surface Phonon ◽  
Quantum Confined ◽  
Surface Phonons

AbstractWe have investigated quantum-confined Stark effect (QCSE) on GaAs and CdSe nanocrystals and the electric field effect on surface phonons of GaAs nanocrystals isolated in sapphire substrates. For a strongly quantum-confined system, GaAs quantum dots illustrated no exciton energy shift. When the excitons are weakly confined in CdSe, a ∼ 2 meV red-shift was observed. On the other hand, the results of the electric field effect on surface phonon are dramatic both phonon oscilator strength and freqnency. As the strength of the electric field increases, the total intensity of the surface phonon decreases. At the same time, an additional peak was also observed at 277 cm-1, which is about 3 cm-1 above the center frequency of the surface phonon mode of GaAs nanocrystals embedded in a sapphire host.

Electric field effect on the ground state proton transfer in the H-bonded HBDI complex: an implication of the green fluorescent protein

RSC Advances ◽  
2014 ◽  
Vol 4 (51) ◽  
pp. 26543-26551 ◽  
Author(s):  
Baotao Kang ◽  
Hongguang Liu ◽  
Du-Jeon Jang ◽  
Jin Yong Lee
Keyword(s):  
Green Fluorescent Protein ◽  
Electric Field ◽  
Proton Transfer ◽  
Ground State ◽  
First Principles ◽  
Field Effect ◽  
Fluorescent Protein ◽  
Electric Field Effect ◽  
First Principles Calculations ◽  
Green Fluorescent

In this paper, first-principles calculations were performed regarding the electric field effect on the ground state proton transfer (GSPT) in the H-bonded p-hydroxybenzylideneimidazolidinone (HBDI) network that represents the active site of the green fluorescent protein (GFP).

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