Nanostructures: Superlattices, Quantum Wires, and Quantum Dots

2015 ◽  
pp. 183-204
Author(s):  
Rudolf P. Huebener
Keyword(s):  
Quantum Dots ◽  
Quantum Wires

Zinc Blende 0D Quantum Dots to Wurtzite 1D Quantum Wires: The Oriented Attachment and Phase Change in ZnSe Nanostructures

2013 ◽  
Vol 4 (19) ◽  
pp. 3292-3297 ◽  
Author(s):  
Suresh Sarkar ◽  
Shinjita Acharya ◽  
Arup Chakraborty ◽  
Narayan Pradhan
Keyword(s):  
Quantum Dots ◽  
Phase Change ◽  
Quantum Wires ◽  
Oriented Attachment ◽  
Zinc Blende

Ultrafast Carrier Dynamics, Optical Amplification, and Lasing in Nanocrystal Quantum Dots

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 998-1004 ◽  
Author(s):  
Victor I. Klimov ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Electronic States ◽  
Three Dimensions ◽  
Band Edge ◽  
Lasing Threshold ◽  
Wide Energy Range ◽  
Band Edge Emission ◽  
Edge States

Semiconductor materials are widely used in both optically and electrically pumped lasers. The use of semiconductor quantum wells (QWs) as optical-gain media has resulted in important advances in laser technology. QWs have a two-dimensional, step-like density of electronic states that is nonzero at the band edge, enabling a higher concentration of carriers to contribute to the band-edge emission and leading to a reduced lasing threshold, improved temperature stability, and a narrower emission line. A further enhancement in the density of the band-edge states and an associated reduction in the lasing threshold are in principle possible using quantum wires and quantum dots (QDs), in which the confinement is in two and three dimensions, respectively. In very small dots, the spacing of the electronic states is much greater than the available thermal energy (strong confinement), inhibiting thermal depopulation of the lowest electronic states. This effect should result in a lasing threshold that is temperatureinsensitive at an excitation level of only 1 electron-hole (e-h) pair per dot on average. Additionally, QDs in the strongconfinement regime have an emission wavelength that is a pronounced function of size, adding the advantage of continuous spectral tunability over a wide energy range simply by changing the size of the dots.

Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

2015 ◽  
Vol 347 ◽  
pp. 471-474 ◽  
Author(s):  
A. Ramírez-Porras ◽  
O. García ◽  
C. Vargas ◽  
A. Corrales ◽  
J.D. Solís
Keyword(s):  
Quantum Dots ◽  
Quantum Confinement ◽  
Quantum Wires ◽  
Nanocrystalline Silicon ◽  
Localized States
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