Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

2015 ◽  
Vol 347 ◽  
pp. 471-474 ◽  
Author(s):  
A. Ramírez-Porras ◽  
O. García ◽  
C. Vargas ◽  
A. Corrales ◽  
J.D. Solís
Keyword(s):  
Quantum Dots ◽  
Quantum Confinement ◽  
Quantum Wires ◽  
Nanocrystalline Silicon ◽  
Localized States

The role of surface vibrations and quantum confinement effect to the optical properties of very thin nanocrystalline silicon films

2007 ◽  
Vol 102 (8) ◽  
pp. 083534 ◽  
Author(s):  
Emmanouil Lioudakis ◽  
Antreas Antoniou ◽  
Andreas Othonos ◽  
Constantinos Christofides ◽  
A. G. Nassiopoulou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Confinement Effect ◽  
Surface Vibrations ◽  
Nanocrystalline Silicon Films

scholarly journals A Quantum Confinement Study of the Electronic Energy of some Nanocrystalline Silicon Quantum-Dots

2016 ◽  
Vol 63 ◽  
pp. 106-110
Author(s):  
Sylvester A. Ekong ◽  
Mike O. Osiele
Keyword(s):  
Quantum Dots ◽  
Quantum Confinement ◽  
Selection Rule ◽  
Graphical Representation ◽  
Nanocrystalline Silicon ◽  
Electronic Energy ◽  
Effective Diameter ◽  
Si Quantum Dot ◽  
Different Shapes ◽  
Good Agreement

We have employed a quantum confinement (QC) model to the study of different shapes of nanocrystalline silicon (nc-Si) quantum dot. Each dots (shapes), although within the limits of an effective diameter of 3nm, exhibits divergence leading to different electronic energy based on the transitions from the quantum selection rule. Also, the graphical representation of the energies from each shape as a function of the effective diameter gives a qualitatively similar spectrum of discrete energies. The results obtained in this work using QC model are in good agreement with experiment and other models in literature.

scholarly journals Estimation of Silicon Nanocrystalline Sizes from Photoluminescence Measurements of RF Co-Sputtered Si/SiO2 Films.

2002 ◽  
Vol 737 ◽  
Author(s):  
A. Ramírez-Porras ◽  
L.F. Fonseca ◽  
O. Resto
Keyword(s):  
Quantum Dots ◽  
Quantum Confinement ◽  
Quantum Wires ◽  
Sio2 Films ◽  
Pl Spectra ◽  
Si Nanocrystals ◽  
Quartz Substrates ◽  
Stochastic Distribution ◽  
Confinement Model

ABSTRACTA stochastic distribution of nanocrystalline sizes model is applied to fit photoluminescence (PL) spectra of luminescent Si nanocrystals in a Si/SiO2 matrix synthesized by RF co-sputtering on the top of quartz substrates. With this method, the PL spectra from a diverse set of samples can be resolved mainly as the sum of two components: a contribution from a gaussian-like distribution of sizes of quantum dots (QD) and a similar component from a distribution of quantum wires (QW). These distributions of sizes and their associated PL energies agree well with the so-called Smart Quantum Confinement model (SQC).

Transition from Two-Dimensional to Three-Dimensional Quantum Confinement in Semiconductor Quantum Wires/Quantum Dots

Nano Letters ◽  
2007 ◽  
Vol 7 (8) ◽  
pp. 2227-2233 ◽  
Author(s):  
Q. Zhu ◽  
K. F. Karlsson ◽  
E. Pelucchi ◽  
E. Kapon
Keyword(s):  
Quantum Dots ◽  
Quantum Confinement ◽  
Quantum Wires ◽  
Three Dimensional ◽  
Two Dimensional

Role of LO Phonons in Optical Spectra of Quantum Dot Aggregates in Sub-Wetting Layer Region of Energy

2003 ◽  
Vol 17 (15) ◽  
pp. 813-819
Author(s):  
K. Král ◽  
P. Zdeněk ◽  
Z. Khás ◽  
M. Čerňanský
Keyword(s):  
Quantum Dots ◽  
Optical Spectra ◽  
Localized States ◽  
Electronic Excitations ◽  
Wetting Layer ◽  
Growth Method ◽  
Extended States ◽  
Layer Region ◽  
The Individual

Samples of the self-assembled polar semiconductor quantum dots, grown by the Stranski–Krastanow growth method, contain the wetting layer, representing the lowest barrier for the electronic excitations to get to the extended motion states. The scattering of electrons between the extended states and the electronic states localized in the individual quantum dots, with emission or absorption of optical phonons via Fröhlich's coupling, may influence the optical spectra of such samples in the sub-wetting layer region of the energy of electronic excitations. The contribution of this interaction to the appearance of the sub-wetting layer continuum in the optical spectra and to the level broadening of the localized states, is studied.

Role of dimensionality and quantum confinement inp-type semiconductor indium phosphide quantum dots

2008 ◽  
Vol 78 (23) ◽  
Author(s):  
M. M. G. Alemany ◽  
Luis Tortajada ◽  
Xiangyang Huang ◽  
Murilo L. Tiago ◽  
L. J. Gallego ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Indium Phosphide ◽  
Quantum Confinement ◽  
Type Semiconductor

Investigation of Photoluminescence Mechanisms from SiO2/Si:SiO2/SiO2 Structures in Weak Quantum Confined Regime by Deconvolution of Photoluminescence Spectra

2016 ◽  
Vol 16 (4) ◽  
pp. 4052-4064 ◽  
Author(s):  
Evrin Tuğay ◽  
Raşsit Turan
Keyword(s):  
Quantum Confinement ◽  
Localized States ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Origin And Evolution ◽  
Post Annealing ◽  
Si Nanocrystals ◽  
Localized Defects ◽  
Amorphous Si

Si nanocrystals embedded in SiO2 matrix were prepared by co-sputtering method followed by a post annealing process in N2 ambient. By fixing sputtering parameters, the effects of annealing time and annealing temperature on the optical properties of Si nanocrystals are investigated. Origin and evolution of the photoluminescence (PL) in weak quantum confinement regime are discussed in the light of X-ray diffraction, Fourier transform infrared, and temperature dependent photoluminescence measurements. For all samples, the PL peaks tend to decompose to four Gaussian peaks in which attributed to the radiative defects in SiO2 matrix, nc-Si/SiO2 interface related localized defects, localized states in the amorphous Si band gap and quantum confinement of excitons in smaller nanocrystals. Considering the observation of luminescence and its decomposition tendency in nanocrystals with average sizes larger than exciton’s Bohr radius the necessity to distinguish between the role of smaller and larger nanocrystals in the PL mechanisms is discussed. Furthermore, possible origin of the interface related localized states in particular Si=O double bonds in the nc-Si/SiO2 interface and that of radiative defects in SiO2 matrix are discussed.

scholarly journals The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects

Nanoscale ◽  
2015 ◽  
Vol 7 (26) ◽  
pp. 11401-11408 ◽  
Author(s):  
S. Cosentino ◽  
A. M. Mio ◽  
E. G. Barbagiovanni ◽  
R. Raciti ◽  
R. Bahariqushchi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Quantum Confinement ◽  
Confinement Effects ◽  
Quantum Confinement Effects ◽  
Ge Quantum Dots ◽  
Germanium Quantum Dots ◽  
Interface Effects

This work elucidates the interplay between quantum confinement and interface effects in the optical properties of Ge quantum dots, demonstrating that not only size matters at the nanoscale.

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