Low Trigger Voltage and High Turn-On Speed SCR for ESD Protection in Nanometer Technology

2017 ◽  
pp. 151-181
Author(s):  
Jizhi Liu ◽  
Zhiwei Liu ◽  
Fei Hou ◽  
Hui Cheng ◽  
Liu Zhao ◽  
...  
Keyword(s):  
Turn On ◽  
Esd Protection ◽  
Nanometer Technology

Design of Gate-Ground-NMOS-Based ESD Protection Circuits with Low Trigger Voltage, Low Leakage Current, and Fast Turn-On

ETRI Journal ◽  
2009 ◽  
Vol 31 (6) ◽  
pp. 725-731 ◽  
Author(s):  
Yong-Seo Koo ◽  
Kwangsoo Kim ◽  
Shihong Park ◽  
Kwidong Kim ◽  
Jong-Kee Kwon
Keyword(s):  
Leakage Current ◽  
Turn On ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Esd Protection ◽  
Protection Circuits

Augmented DTSCR With Fast Turn-On Speed for Nanoscale ESD Protection Applications

2020 ◽  
Vol 67 (3) ◽  
pp. 1353-1356
Author(s):  
Feibo Du ◽  
Wenqiang Song ◽  
Fei Hou ◽  
Jizhi Liu ◽  
Zhiwei Liu ◽  
...  
Keyword(s):  
Turn On ◽  
Esd Protection

Compact MOS-triggered SCR with faster turn-on speed for ESD protection

2010 ◽  
Vol 50 (9-11) ◽  
pp. 1393-1397 ◽  
Author(s):  
Bo Song ◽  
Yan Han ◽  
Shurong Dong ◽  
Fei Ma ◽  
Mingliang Li ◽  
...  
Keyword(s):  
Turn On ◽  
Esd Protection

scholarly journals ESD protection circuit with low triggering voltage and fast turn-on using substrate-triggered technique

2009 ◽  
Vol 6 (8) ◽  
pp. 467-471 ◽  
Author(s):  
Yong-Seo Koo ◽  
Kwi-Dong Kim ◽  
Jong-Kee Kwon
Keyword(s):  
Turn On ◽  
Esd Protection ◽  
Protection Circuit

A novel DTSCR with a variation lateral base doping structure to improve turn-on speed for ESD protection

2014 ◽  
Vol 35 (6) ◽  
pp. 064010 ◽  
Author(s):  
Jizhi Liu ◽  
Zhiwei Liu ◽  
Ze Jia ◽  
Juin. J. Liou
Keyword(s):  
Turn On ◽  
Esd Protection ◽  
Base Doping
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