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Compact MOS-triggered SCR with faster turn-on speed for ESD protection
Microelectronics Reliability
◽
10.1016/j.microrel.2010.07.112
◽
2010
◽
Vol 50
(9-11)
◽
pp. 1393-1397
◽
Cited By ~ 6
Author(s):
Bo Song
◽
Yan Han
◽
Shurong Dong
◽
Fei Ma
◽
Mingliang Li
◽
...
Keyword(s):
Turn On
◽
Esd Protection
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References
Design of Gate-Ground-NMOS-Based ESD Protection Circuits with Low Trigger Voltage, Low Leakage Current, and Fast Turn-On
ETRI Journal
◽
10.4218/etrij.09.1209.0045
◽
2009
◽
Vol 31
(6)
◽
pp. 725-731
◽
Cited By ~ 4
Author(s):
Yong-Seo Koo
◽
Kwangsoo Kim
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Shihong Park
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Jong-Kee Kwon
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Augmented DTSCR With Fast Turn-On Speed for Nanoscale ESD Protection Applications
IEEE Transactions on Electron Devices
◽
10.1109/ted.2020.2965092
◽
2020
◽
Vol 67
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◽
pp. 1353-1356
Author(s):
Feibo Du
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Wenqiang Song
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Fei Hou
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Jizhi Liu
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Dummy-Gate Structure to Improve Turn-on Speed of Silicon-Controlled Rectifier (SCR) Device for Effective Electrostatic Discharge (ESD) Protection
Japanese Journal of Applied Physics
◽
10.1143/jjap.42.l1366
◽
2003
◽
Vol 42
(Part 2, No. 11B)
◽
pp. L1366-L1368
Author(s):
Ming-Dou Ker
◽
Kuo-Chun Hsu
Keyword(s):
Electrostatic Discharge
◽
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Gate Structure
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Dummy Gate
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Electrical characteristics of the novel BiCMOS ESD protection circuit with low trigger voltage, low leakage and fast turn-on
TENCON 2011 - 2011 IEEE Region 10 Conference
◽
10.1109/tencon.2011.6129191
◽
2011
◽
Author(s):
Byung-Seok Lee
◽
Jin-Woo Jung
◽
Dong-Su Kim
◽
Yil-Suk Yang
◽
Yong-Seo Koo
Keyword(s):
The Novel
◽
Electrical Characteristics
◽
Turn On
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Low Leakage
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ESD protection circuit with low triggering voltage and fast turn-on using substrate-triggered technique
IEICE Electronics Express
◽
10.1587/elex.6.467
◽
2009
◽
Vol 6
(8)
◽
pp. 467-471
◽
Cited By ~ 1
Author(s):
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Kwi-Dong Kim
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Esd Protection
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Native-NMOS-Triggered SCR With Faster Turn-On Speed for Effective ESD Protection in a 0.13-$rm murm m$CMOS Process
IEEE Transactions on Device and Materials Reliability
◽
10.1109/tdmr.2005.853514
◽
2005
◽
Vol 5
(3)
◽
pp. 543-554
◽
Cited By ~ 14
Author(s):
M.-D. Ker
◽
K.-C. Hsu
Keyword(s):
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Study of turn-on characteristics of SCRs for ESD protection with TDR-O and TDR-S TLPs
2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
◽
10.1109/ipfa.2010.5532309
◽
2010
◽
Cited By ~ 4
Author(s):
Ming-xu Huo
◽
Yan Han
◽
You Li
◽
Bo Song
◽
Juin-jie Liou
◽
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A novel DTSCR with a variation lateral base doping structure to improve turn-on speed for ESD protection
Journal of Semiconductors
◽
10.1088/1674-4926/35/6/064010
◽
2014
◽
Vol 35
(6)
◽
pp. 064010
◽
Cited By ~ 2
Author(s):
Jizhi Liu
◽
Zhiwei Liu
◽
Ze Jia
◽
Juin. J. Liou
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Base Doping
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Low Trigger Voltage and High Turn-On Speed SCR for ESD Protection in Nanometer Technology
Outlook and Challenges of Nano Devices, Sensors, and MEMS
◽
10.1007/978-3-319-50824-5_6
◽
2017
◽
pp. 151-181
Author(s):
Jizhi Liu
◽
Zhiwei Liu
◽
Fei Hou
◽
Hui Cheng
◽
Liu Zhao
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Turn-on speed of grounded gate NMOS ESD protection transistors
Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
◽
10.1109/esref.1996.888204
◽
2005
◽
Cited By ~ 9
Author(s):
G. Meneghesso
◽
J.R.M. Luchies
◽
F.G. Kuper
◽
A.J. Mouthhaan
Keyword(s):
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Esd Protection
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