Electro-Optic Sampling and Charge-Density Probe

2017 ◽  
pp. 43-54
Author(s):  
Selahattin Sayil
Keyword(s):  
Charge Density ◽  
Electro Optic ◽  
Density Probe

Noninvasive sheet charge density probe for integrated silicon devices

1986 ◽  
Vol 48 (16) ◽  
pp. 1066-1068 ◽  
Author(s):  
H. K. Heinrich ◽  
D. M. Bloom ◽  
B. R. Hemenway
Keyword(s):  
Charge Density ◽  
Silicon Devices ◽  
Sheet Charge ◽  
Density Probe

VB-3 noninvasive optical sheet charge density probe for silicon integrated circuits

1986 ◽  
Vol 33 (11) ◽  
pp. 1860-1860 ◽  
Author(s):  
H.K. Heinrich ◽  
D.M. Bloom ◽  
B.R. Hemenway ◽  
K. McGroddy ◽  
U. Keller
Keyword(s):  
Integrated Circuits ◽  
Charge Density ◽  
Silicon Integrated Circuits ◽  
Sheet Charge ◽  
Density Probe

Dynamics of the electro-optic response of charge-density-wave conductors

2005 ◽  
Vol 131 ◽  
pp. 135-138
Author(s):  
J. W. Brill ◽  
L. Ladino ◽  
M. Freamat ◽  
M. Uddin ◽  
R. C. Rai
Keyword(s):  
Charge Density ◽  
Charge Density Wave ◽  
Density Wave ◽  
Electro Optic

Erratum: Noninvasive sheet charge density probe for integrated silicon devices [Appl. Phys. Lett. 48, 1066 (1986)]

1986 ◽  
Vol 48 (26) ◽  
pp. 1811-1811 ◽  
Author(s):  
H. K. Heinrich ◽  
D. M. Bloom ◽  
B. R. Hemenway
Keyword(s):  
Charge Density ◽  
Silicon Devices ◽  
Sheet Charge ◽  
Density Probe

Incommensurate modulated phases of the NbxTa1-xTe4 charge density wave system

1992 ◽  
Vol 50 (1) ◽  
pp. 58-59
Author(s):  
S. Ritchie ◽  
J. C. Bennett ◽  
A. Prodan ◽  
F.W. Boswell ◽  
J.M. Corbett
Keyword(s):  
Charge Density ◽  
Charge Density Wave ◽  
Direct Evidence ◽  
Density Wave ◽  
Wave System ◽  
Modulated Phases ◽  
Metal Atoms ◽  
Incommensurate Modulation ◽  
End Members ◽  
Modulation Wave Vector

A continuous sequence of compounds having composition NbxTa1-xTe4; 0 ≤ x ≤ 1 have been studied by electron diffraction and microscopy. Previous studies have shown that the end members of the series, TaTε4 and NbTε4 possess a quasi-one-dimensional character and exhibit charge density wave (CDW) distortions. In these compounds, the subcell structure is tetragonal with axes (a × a × c) and consists of the metal atoms (Nb or Ta) centered within an extended antiprismatic cage of Te atoms. At room temperature, TaTε4 has a commensurate modulation structure with a 2a × 2a × 3c unit cell. In NbTε4, an incommensurate modulation with × ∼ 16c axes is observed. Preliminary studies of the mixed compounds NbxTα1-xTε4 showed a discontinuous jump of the modulation wave vector commensurate to incommensurate when the Nb dopant concentration x, exceeded x ≃ 0.3, In this paper, the nature of the compositional dependence of is studied in greater detail and evidence is presented for a stepwise variation of . This constitutes the first direct evidence for a Devil's staircase in CDW materials.

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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