Noninvasive sheet charge density probe for integrated silicon devices

1986 ◽  
Vol 48 (16) ◽  
pp. 1066-1068 ◽  
Author(s):  
H. K. Heinrich ◽  
D. M. Bloom ◽  
B. R. Hemenway
Keyword(s):  
Charge Density ◽  
Silicon Devices ◽  
Sheet Charge ◽  
Density Probe

Erratum: Noninvasive sheet charge density probe for integrated silicon devices [Appl. Phys. Lett. 48, 1066 (1986)]

1986 ◽  
Vol 48 (26) ◽  
pp. 1811-1811 ◽  
Author(s):  
H. K. Heinrich ◽  
D. M. Bloom ◽  
B. R. Hemenway
Keyword(s):  
Charge Density ◽  
Silicon Devices ◽  
Sheet Charge ◽  
Density Probe

VB-3 noninvasive optical sheet charge density probe for silicon integrated circuits

1986 ◽  
Vol 33 (11) ◽  
pp. 1860-1860 ◽  
Author(s):  
H.K. Heinrich ◽  
D.M. Bloom ◽  
B.R. Hemenway ◽  
K. McGroddy ◽  
U. Keller
Keyword(s):  
Integrated Circuits ◽  
Charge Density ◽  
Silicon Integrated Circuits ◽  
Sheet Charge ◽  
Density Probe

Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT

2016 ◽  
Vol 37 (4) ◽  
pp. 044003 ◽  
Author(s):  
J. Panda ◽  
K. Jena ◽  
R. Swain ◽  
T. R. Lenka
Keyword(s):  
Charge Density ◽  
Threshold Voltage ◽  
Sheet Charge

Theoretical Charge Control Investigations in InN-Based Quantum Well Double Heterostructure High Electron Mobility Transistors (QW-DHEMTs)

2011 ◽  
Vol 403-408 ◽  
pp. 52-58 ◽  
Author(s):  
Md. Rejvi Kaysir ◽  
Rafiqul Islam
Keyword(s):  
Quantum Well ◽  
Charge Density ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Charge Control ◽  
Electron Mobility Transistors ◽  
Sheet Charge

In this paper, charge control mechanism and carrier features have been precisely investigated in InxGa1-xN/InN/InxGa1-xN based quantum-well double heterostructure high electron mobility transistors (QW-DHEMTs). A study of charge control in the InxGa1-xN/InN/InxGa1-xN structure is performed by self-consistently solving Schrödinger equation in conjunction with Poisson’s equation taking into account the spontaneous and piezoelectric polarization effects. The potential profile and the distribution of electron density in the channel as a function of gate voltage are investigated here. A large conduction band offset of about 2.2eV is obtained for the proposed device for In content x=0.05, which ensure better carrier confinement and higher sheet charge density. The influence of In composition(x) and doping concentration of InxGa1-xN upper barrier on sheet charge density and carrier distributions in channel is also presented. This analysis provides a platform to investigate the InN based QW-DHEMTs and to optimized their design.

The Influence of Device Structure on High-electric-field Effects and Reliability of AlGaN/GaN HFETs

2006 ◽  
Vol 955 ◽  
Author(s):  
Weiwei Kuang ◽  
Robert J Trew ◽  
Griff L Bilbro ◽  
Yueying Liu
Keyword(s):  
Electric Field ◽  
Charge Density ◽  
Output Power ◽  
Device Structure ◽  
Electric Field Effects ◽  
Barrier Layer Thickness ◽  
Algan Barrier Layer ◽  
Sheet Charge ◽  
Rf Performance ◽  
Dc Current

ABSTRACTAlGaN/GaN HFETs have demonstrated excellent RF performance, but the devices still suffer from a reliability problem. The decrease of the dc current and RF output power over time is attributed to gate tunneling which is determined by the magnitude of electric field at the gate edge. In this work, in order to improve the reliability of AlGaN/GaN HFETs, a 2D drift-diffusion tool is used to explore the relationship between the magnitude of electric field and different device structures through modifications of the 2DEG sheet charge density, AlGaN barrier layer thickness, AlGaN doping concentration and gate to drain spacing. The effect of field plates is also investigated. It was found that decreasing 2DEG sheet charge density results in much improved reliability, although the current and output power are somewhat reduced.

scholarly journals Analytical Model Development for Unified 2D Electron Gas Sheet Charge Density of AlInN/GaN MOSHEMT

2017 ◽  
Vol 63 (4) ◽  
pp. 363-368 ◽  
Author(s):  
Gaini Amarnath ◽  
Trupti Ranjan Lenka
Keyword(s):  
Fermi Level ◽  
Charge Density ◽  
Model Development ◽  
Electron Gas ◽  
High Electron Mobility Transistor ◽  
Oxide Semiconductor ◽  
Level Energy ◽  
High Electron ◽  
2D Electron Gas ◽  
Sheet Charge

Abstract We have developed a unified analytical model for computation of 2D electron gas sheet charge density in AlInN/GaN metal-oxide-semiconductor high electron mobility transistor device structure. This model has been developed by incorporating the variation in lowest three energy sub-bands and Fermi level energy in the quantum-well with respect to gate voltage. We noticed that the dependency of lowest sub-band energy with Fermi energy having two fields, which are the lowest sub-band energy is greater and lesser than the Fermi level energy. According to these two fields, we have developed the fermi energy and sheet charge density expressions in each field. By combining each field of the models, developed a unified 2D electron gas sheet charge density model. The Fermi level and sheet charge density are interdependent in the model development. The developed model results are compared with TCAD simulation results and obtain a good consistency between them. This model is fitted to other metal-oxide-semiconductor high electron mobility transistor devices also with modifications in related physical values.

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