Collapse of the excitonic states at r s = 8 in high quality GaAs/AlGaAs single quantum wells

2001 ◽  
pp. 511-512
Author(s):  
S. I. Gubarev ◽  
I. V. Kukushkin ◽  
S. V. Tovstonog ◽  
M. Yu. Akimov ◽  
L. V. Kulik ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
High Quality ◽  
Excitonic States

Growth and characterization of high-quality MOCVD AlGaAs/GaAs single quantum wells

1984 ◽  
Vol 68 (1) ◽  
pp. 398-405 ◽  
Author(s):  
R.D. Dupuis ◽  
R.C. Miller ◽  
P.M. Petroff
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
High Quality

Optical investigations and exciton localization in high quality Zn1−xMgxO–ZnO single quantum wells

2007 ◽  
Vol 91 (8) ◽  
pp. 081911 ◽  
Author(s):  
M. Al-Suleiman ◽  
A. El-Shaer ◽  
A. Bakin ◽  
H.-H. Wehmann ◽  
A. Waag
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
High Quality ◽  
Exciton Localization

Modulated beam epitaxial growth of high quality GaAs single quantum wells at low temperature

1991 ◽  
Vol 59 (7) ◽  
pp. 820-822 ◽  
Author(s):  
K. F. Longenbach ◽  
S. Xin ◽  
C. Schwartz ◽  
Y. Jiang ◽  
W. I. Wang
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Single Quantum ◽  
High Quality

On the preparation and characterization of high‐quality GaAs single quantum wells

1992 ◽  
Vol 71 (10) ◽  
pp. 5263-5265 ◽  
Author(s):  
R. Hey ◽  
M. Höricke ◽  
A. Frey ◽  
V. Egorov ◽  
P. Krispin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
High Quality

Photoluminescence spectroscopy on excitonic states of narrow GaAs–AlGaAs single quantum wells in high magnetic field

1998 ◽  
Vol 24 (4) ◽  
pp. 259-262 ◽  
Author(s):  
H.S. Ko ◽  
S.J. Rhee ◽  
Y.M. Kim ◽  
W.S. Kim ◽  
D.H. Kim ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
High Magnetic Field ◽  
Photoluminescence Spectroscopy ◽  
Single Quantum ◽  
Excitonic States

High quality In0.2Ga0.8As/AlxGa1−xAs (x=0−0.32) strained single quantum wells grown by molecular beam epitaxy

1993 ◽  
Vol 62 (2) ◽  
pp. 190-192 ◽  
Author(s):  
Toshiro Hayakawa ◽  
Hideyoshi Horie ◽  
Masaharu Nagai ◽  
Yoshihisa Niwata
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Single Quantum ◽  
High Quality

High-quality InGaAsP/InP single-quantum wells and superlattice structures grown by low-pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 93 (1-4) ◽  
pp. 376-381 ◽  
Author(s):  
M. Kondo ◽  
S. Yamazaki ◽  
M. Sugawara ◽  
H. Okuda ◽  
K. Kato ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Superlattice Structures

Localized excitonic states in ZnS–ZnSe single quantum wells

1998 ◽  
Vol 24 (2) ◽  
pp. 143-147 ◽  
Author(s):  
V.V. Tishchenko ◽  
N.V. Bondar ◽  
A.V. Kovalenko ◽  
M.P. Halsall ◽  
P. Lilley
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Excitonic States

Temperature-dependent photoluminescence of high-quality GaInNAs single quantum wells

2002 ◽  
Vol 80 (12) ◽  
pp. 2087-2089 ◽  
Author(s):  
Sho Shirakata ◽  
Masahiko Kondow ◽  
Takeshi Kitatani
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Temperature Dependent ◽  
High Quality ◽  
Temperature Dependent Photoluminescence

Growth of High Quality (In,Ga,Al)N/GaN Heterostructure Materials and Devices by Atmospheric Pressure MOCVD

1996 ◽  
Vol 423 ◽  
Author(s):  
S. P. Denbaars ◽  
S. Keller ◽  
B. P. Keller ◽  
Y. F. Wu ◽  
D. Kapolnek ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Atmospheric Pressure ◽  
Impurity Level ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Background Impurity ◽  
Direct Band ◽  
Gan Heterostructure

AbstractUsing atmospheric pressure MOCVD we have obtained high quality InGaN/GaN and AlGaN/GaN heterostructure materials and devices. For nominally undoped 4 μm thick GaN films, we obtained 300 K mobilities of 780 cm2/Vs and an unintentional background impurity level of n300K = 6*1016 cm−3. For InGaN/GaN heterostructures we have obtained direct band-edge transitions with FWHM as narrow as 7.9 nm (59 meV) for 50Å thick In0.16Ga0.84N quantum wells at 300K, which is the among the best reported values. The quantum wells display energy shifts towards shorter wavelength with decreasing well thickness, and the shift agrees with predicted quantum effects. These materials have been incorporated into InGaN single quantum well LEDs that emit at 450 nm. In addition AlGaN/GaN heterostructure materials have been incorporated into HFETs and MODFETs. Gate-drain breakdown voltage well exceeding 100 V, and extrinsic transconductance gm of up to 140 mS/mm were realized in the MODFET.

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