MeV-lon Induced Changes in Thin Film Adhesion

Author(s):  
T. A. Tombrello
1988 ◽  
Vol 129 ◽  
Author(s):  
P. A. Ingemarsson ◽  
T. Ericsson ◽  
G. Possnert ◽  
R. Wappling

ABSTRACTConversion electron M6ssbauer spectroscopy was used as a means of investigating radiation induced changes at thin film interfaces. 25 Å thick layers of 57Fe were evaporated onto substrates of Si,SiO2 and A12O3 andcovered with 150 Å 56Fe. Samples were then subjected to ion irradiation with 20 MeV C14+ to doses ranging from 1012 to 2x 1014 ions/cm2 and subsequently annealed in vacuum at 450 ºC. Mössbauer spectra were recorded before and after each step. The analysis revealed chemical alterations, induced by the ion bombardment, indicative of film-substrate bond formation and reconstruction of residual surface hydrocarbons. The results are interpreted in view of accompanying enhancements in thin film adhesion.


1991 ◽  
Vol 239 ◽  
Author(s):  
H. S. Jeong ◽  
Y. Z. Chu ◽  
M. B. Freiler ◽  
C. Durning ◽  
R. C. White

ABSTRACTFracture energy (Ga) of BPDA-PDA polyimide (PI) on modified and unmodified Si surfaces was measured by the “blister” test as a function of final cure temperature. It is proven quantitatively that surface modification prior to thin film deposition enhances adhesion. Metal adhesion to PI was also measured by the same method. Reproducibility of the data was found to be exceptionally good for both cases. The linear elastic model is quite valid for the test of thin film adhesion. Therefore, it is believed that this test is best suited for Ga measurements in the study of thin film adhesion for microelectronic packaging.


Nano Letters ◽  
2021 ◽  
Author(s):  
Jingcheng Ma ◽  
Jin Myung Kim ◽  
Muhammad Jahidul Hoque ◽  
Kamila J. Thompson ◽  
SungWoo Nam ◽  
...  

2016 ◽  
Vol 13 (3) ◽  
pp. 95-101 ◽  
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
J. Ambrose Wolf ◽  
Daniel Krueger

Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high-reliability, high-density microelectronics. The functionality and robustness of rework have been increased through the incorporation of a physical vapor deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for radio frequency (RF) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. Although previous work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e., thermodynamic) parameters in the literature. This article analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxide coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability between pair of materials at specific temperature. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.


2010 ◽  
Vol 44 (3) ◽  
pp. 034003
Author(s):  
Jae Hyun Kim ◽  
Martin Y M Chiang ◽  
Daisuke Kawaguchi ◽  
Naomi Eidelman ◽  
Christopher M Stafford ◽  
...  

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